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Preparation method of solar cell and solar cell

A technology of solar cells and amorphous silicon layers, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve problems such as difficulty in achieving large-scale industrial mass production, slow development of back contact cells, and complicated manufacturing processes, and achieve self-alignment The effect of quasi-etching insulation, realizing selective removal, and simplifying the preparation process steps

Active Publication Date: 2022-07-29
英利能源发展有限公司
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Problems solved by technology

[0003] The object of the present invention is to provide a method for preparing a solar cell, aiming at solving the problem of complex manufacturing process and low yield of existing back contact cells, which lead to back contact The development of batteries is slow and it is difficult to achieve large-scale industrial mass production

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  • Preparation method of solar cell and solar cell
  • Preparation method of solar cell and solar cell
  • Preparation method of solar cell and solar cell

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preparation example Construction

[0034] Please also refer to figure 1 , the preparation method of a solar cell provided by the present invention will now be described. The method for preparing a solar cell comprises the following steps:

[0035] S01: Double-sided texturing of N-type silicon wafers, and backlit surface polishing;

[0036] S02: prepare a first tunneling silicon oxide layer and a boron in-situ doped amorphous silicon layer on the backlight surface of the N-type silicon wafer, and prepare a boron-doped silicon oxide layer on the outer surface of the boron in-situ doped amorphous silicon layer, The redundant first tunneling silicon oxide layer, the boron in-situ doped amorphous silicon layer and the boron-doped silicon oxide layer are removed by laser etching, so as to form a plurality of boron-doped amorphous silicon oxide layers arranged at intervals on the backlight surface of the N-type silicon wafer silicon layer;

[0037] S03: prepare a phosphorus-doped amorphous silicon layer between adj...

Embodiment 1

[0059] S01: Double-sided texturing of N-type silicon wafers, and backlit surface polishing.

[0060] S02: prepare a first tunneling silicon oxide layer and a boron in-situ doped amorphous silicon layer on the backlight surface of the N-type silicon wafer, and prepare a boron-doped silicon oxide layer on the outer surface of the boron in-situ doped amorphous silicon layer, The thickness of the first tunneling silicon oxide layer is 1.5 nm, the thickness of the boron in-situ doped amorphous silicon layer is 120 nm, and the doping concentration of the boron in-situ doped amorphous silicon layer is 3E19 atm / cm 3 , the thickness of the boron-doped silicon oxide layer is 100nm, and the doping concentration of the boron-doped silicon oxide layer is 3E19 atm / cm 3 .

[0061] The redundant first tunneling silicon oxide layer, the boron in-situ doped amorphous silicon layer and the boron-doped silicon oxide layer are removed by laser etching, so as to form a plurality of boron-doped amo...

Embodiment 2

[0078] S01: Double-sided texturing of N-type silicon wafers, and backlit surface polishing.

[0079] S02: prepare a first tunneling silicon oxide layer and a boron in-situ doped amorphous silicon layer on the backlight surface of the N-type silicon wafer, and prepare a boron-doped silicon oxide layer on the outer surface of the boron in-situ doped amorphous silicon layer, The thickness of the first tunneling silicon oxide layer is 1.5 nm, the thickness of the boron in-situ doped amorphous silicon layer is 120 nm, and the doping concentration of the boron in-situ doped amorphous silicon layer is 3E19 atm / cm 3 , the thickness of the boron-doped silicon oxide layer is 100nm, and the doping concentration of the boron-doped silicon oxide layer is 3E19 atm / cm 3 ;

[0080] The redundant first tunneling silicon oxide layer, the boron in-situ doped amorphous silicon layer and the boron-doped silicon oxide layer are removed by laser etching, so as to form a plurality of boron-doped amo...

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Abstract

The invention provides a preparation method of a solar cell and the solar cell, and belongs to the technical field of storage batteries, and the method comprises the steps: preparing a first tunneling silicon oxide layer and a boron in-situ doped amorphous silicon layer on the backlight surface of an N-type silicon wafer, removing the redundant first tunneling silicon oxide layer, the boron in-situ doped amorphous silicon layer and the boron-doped silicon oxide layer through laser etching so as to form a plurality of boron-doped amorphous silicon layers arranged at intervals on the backlight surface of the N-type silicon wafer; preparing a phosphorus-doped amorphous silicon layer between the adjacent boron-doped amorphous silicon layers, and forming a boron-phosphorus co-doped layer between the boron-doped amorphous silicon layer and the phosphorus-doped amorphous silicon layer; through a chemical cleaning mode, a phosphorus-doped region and a boron-doped region which are distributed in a comb-shaped crossed manner are formed on the backlight surface of the N-type silicon wafer, and an insulating region is formed between the phosphorus-doped region and the boron-doped region. According to the preparation method of the solar cell and the solar cell provided by the invention, the preparation process steps of the back field and the back emitter of the back contact cell are greatly simplified, and the cell cost is reduced.

Description

technical field [0001] The invention belongs to the technical field of storage batteries, and more particularly, relates to a preparation method of a solar cell and a solar cell. Background technique [0002] Solar power generation technology is an important field of new energy development. Improving the conversion efficiency of solar panels, increasing the output power per unit area, simplifying the process flow of solar cells, and reducing the manufacturing cost of solar cells are the ultimate goals of solar cell technology advancement. The back-contact battery has no metal electrodes on the light-receiving surface of the battery, which can completely eliminate the optical loss on the front side and increase the short-circuit current. All electrodes are distributed on the back of the battery in a cross-shaped manner, and the larger metallization area improves the battery fill factor. A good passivation process can increase the open circuit voltage of the battery. The stru...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/20H01L31/0747H01L31/0288
CPCH01L31/202H01L31/0288H01L31/0747
Inventor 王子谦孟庆超翟金叶张伟郎芳徐卓王红芳马红娜赵学玲潘明翠王平张文辉吝占胜张雷吴萌萌王钰蕾张任远张莉沫李英叶张丽娜李锋史金超
Owner 英利能源发展有限公司
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