Water-cooled jacket device and single crystal furnace

Abstract

The invention relates to a water-cooled jacket device and a single crystal furnace, the water-cooled jacket device comprises a barrel-shaped body, the bottom of the barrel-shaped body is provided with an adjusting sleeve communicated with the interior of the barrel-shaped body, the adjusting sleeve comprises a first end connected with the barrel-shaped body and a second end opposite to the first end, and the adjusting sleeve is connected with the barrel-shaped body from the first end to the second end. The area of the section of the adjusting sleeve in the radial direction of the cylindrical body is gradually reduced. And through the arrangement of the adjusting sleeve, heat below the cylindrical body is prevented from being transmitted to the inner space of the water-cooled jacket, and heat loss from bottom to top is effectively prevented. The area of the cross section of the adjusting sleeve in the radial direction of the cylindrical body is gradually reduced, so that when inert gas flow is blown and flows through the adjusting sleeve from the upper part of the crystal pulling furnace, the flow speed is increased, the full contact between the inert gas flow and a crystal bar is ensured, the cooling rate of the crystal bar is improved, and the longitudinal and radial temperature gradients of the crystal bar are well adjusted; controlling the reaction rate of defects in the crystal bar, adjusting defect distribution, and drawing different types of crystal bars.

Description

technical field [0001] The invention relates to the technical field of production of single crystal silicon products, in particular to a water cooling jacket device and a single crystal furnace. Background technique [0002] With the continuous improvement of advanced semiconductor processes, the quality requirements of semiconductor wafers are getting higher and higher, and for the quality of wafers, the crystal pulling process has a great impact on the core quality of wafers, such as oxygen content, BMD (Bulk Micro Defects) ), stacking faults, COPs (crystal originated particles), FPD (flow pattern defects), LSTDs (laser scattering tomography defects) and other qualities are closely related to the crystal pulling process. [0003] The thermal history experienced during the growth of the crystal rod largely affects the overall quality of the crystal rod, and the thermal history is mainly affected by the longitudinal and axial temperature gradients of the crystal rod. The str...

AI Technical Summary

Problems solved by technology

In the related art, the water-cooling jacket is cylindrical, which greatly limits its temperature adjustment to the axial and longitudinal directions of the ingot, and the crystal defects of the ingot cannot be well controlled. Good conduction, resulting in excessive internal stress accumulation, and then lead to misalignment, which greatly affects the quality of the ingot, especially for epitaxial products in the epitaxial deposition process, stacking faults will cause uneven deposition, and even cause deposition failure

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