Single Raman peak decoupling method for simultaneously measuring internal temperature and thermal stress of micro device

Abstract

The invention discloses a single Raman peak decoupling method and device for simultaneously measuring the internal temperature and thermal stress of a micro device, electronic equipment and a storage medium, and the method comprises the steps: obtaining the apparent temperature deviation coefficient distribution of a single Raman characteristic peak in a target region of the micro device in a non-working state; calculating the proportion of the influence of temperature rise and thermal stress of each position point in the target area on Raman characteristic peak offset according to the apparent temperature offset coefficient distribution; scanning to obtain the distribution of the peak position offset of the Raman characteristic peak in the target area under the working state of the micro device; and calculating the temperature rise and thermal stress value of each position point in the target area of the micro device according to the distribution of the peak position offset of the Raman characteristic peak in the target area under the working state of the micro device and the proportion of the influence of the temperature rise and thermal stress of each position point in the target area on the Raman characteristic peak offset. Therefore, the problem that the internal temperature and the thermal stress of the complex microstructure are difficult to accurately and simultaneously measure is solved.

Description

technical field [0001] The present application relates to the technical field of thermophysical measurement, in particular to a single Raman peak decoupling method, device, electronic device and storage medium for simultaneously measuring the internal temperature and thermal stress of a micro-device. Background technique [0002] With the innovative development and size reduction of microdevice design and manufacturing technology, high temperature and thermal stress have become important factors restricting the development of microdevices. Both temperature and stress will affect the important physical properties of materials such as thermal conductivity, carrier mobility, band gap, etc., and thermal stress caused by high temperature will damage the internal structure and directly lead to device failure. Accurate measurement of temperature and thermal stress inside microdevices is fundamental to device protection, design, and optimization. Since Raman spectroscopy can accura...

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Problems solved by technology

[0006] This application provides a single Raman peak decoupling method, device, electronic equipment and storage medium for simultaneously measuring the internal temperature and thermal stress of micro-devices to solve complex micro-devices. It is difficult to measure the temperature and thermal stress inside the structure accurately and simultaneously

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