Internal defect imaging method based on terahertz waves, electronic equipment and storage medium

Abstract

The invention discloses an internal defect imaging method based on terahertz waves, electronic equipment and a computer readable storage medium. The method comprises the following steps: acquiring a plurality of terahertz reflected waves reflected by performing terahertz wave scanning detection on a plurality of detection points of a to-be-detected product; extracting waveform characteristic parameters of the plurality of terahertz reflected waves; inputting the waveform characteristic parameters of the plurality of terahertz reflected waves into a defect identification model to obtain a defect detection result and a defect decision value of each detection point; and generating a defect imaging graph based on the defect detection result of each detection point, and generating a defect position decision graph based on the defect decision value of each detection point. The terahertz waves are utilized to realize internal defect imaging of the to-be-detected product, the defect detection accuracy is high, and the severity of the internal defect can be determined.

Description

technical field [0001] The present invention relates to the technical field of product inspection, and in particular, to a terahertz wave-based internal defect imaging method, an electronic device and a computer-readable storage medium. Background technique [0002] In the process of product production and processing, due to the reasons of processing technology or processing equipment, products may have different degrees of defects. At present, product defect detection is generally carried out by manual observation or automatic identification after taking pictures with an image device, but it is difficult to distinguish the defects in the product in this way. [0003] Taking the product to be tested as a high-voltage insulated cable as an example, different degrees of outer sheath damage may cause air gaps in the outer sheath, resulting in internal defects. The existence of the internal defects of the outer sheath may lead to a decrease in the insulation resistance of the a...

AI Technical Summary

Problems solved by technology

The currently used outer sheath fault location methods mainly include step voltage method, DC impact method and audio frequency method, but on the one hand, these methods may cause damage to the cable sheath, and on the other hand, they are only applicable to the failure of the outer sheath. Positioning under the condition of the defect, and the severity of the defect cannot be obtained intuitively

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