Ultrahigh vacuum in-situ film multi-patterning device and method

Abstract

The invention discloses an ultrahigh vacuum in-situ film multi-patterning device which comprises an ultrahigh vacuum cavity, a sample support, a multi-position mask table and an optical displacement sensor. A horizontal channel is arranged in the ultrahigh vacuum cavity, the sample support is located at the top of the horizontal channel, the sample is located at the bottom of the sample support, the multi-position mask table is located in the horizontal channel, the multi-position mask table is provided with a plurality of hollowed-out positions in the horizontal direction, the masks are located on the hollowed-out positions, and the multi-position mask table is connected with a first linear motion mechanism and a second linear motion mechanism. The movement directions are the horizontal direction and the vertical direction respectively; an observation channel is arranged at the bottom of the ultrahigh vacuum cavity and communicated with the bottom of the sample support, a quartz observation window is arranged in the observation channel in a sealed mode, an optical displacement sensor is arranged below the quartz observation window, and the measuring end of the optical displacement sensor faces the bottom of the sample support. The distance between a mask and a sample can be adjusted, and multi-patterning operation can be performed.

Description

technical field [0001] The invention belongs to the field of in-situ patterning, and relates to an ultra-high vacuum in-situ thin film multi-patterning device and method. Background technique [0002] Electronic devices based on two-dimensional materials have excellent optoelectronic properties, transport properties, superconducting properties, etc., and have broad application prospects. Because the surface of two-dimensional materials is easily affected by the adsorption of impurities or gas molecules in the atmosphere, resulting in changes in structure and properties, two-dimensional materials are often prepared in ultra-high vacuum environments by molecular beam epitaxy (MBE) and other methods. The basic properties of two-dimensional electronic devices, such as high-resolution atomic phases, superconductivity, and topology, are inseparable from in-situ growth and testing in ultra-high vacuum environments. Therefore, it is very important to realize in-situ fabrication and...

AI Technical Summary

Problems solved by technology

[0005] When encountering devices with multi-layer structures or complex patterns, it is necessary to use multiple different masks to achieve multi-patterning. However, in the actual operation process, the mask can only be replaced or moved manually. Operate to reduce the distance between the mask and the sample as much as possible, but this operation is time-consuming and laborious, and the degree of refinement is too low

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