Linear power amplifier insensitive to temperature

A linear power and amplifier technology, applied to amplifiers, amplifiers with semiconductor devices/discharge tubes, amplifier protection circuit layout, etc., can solve the problems of difficult inter-stage harmonic impedance control, low power gain, poor temperature consistency, etc.

Active Publication Date: 2022-05-24
CHENGDU GANIDE TECH
View PDF8 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In view of the above-mentioned deficiencies in the prior art, the temperature-insensitive linear power amplifier provided by the present invention simultaneously solves the problems of low power gain, difficult control of inter-stage harmonic impedance and poor temperature consistency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Linear power amplifier insensitive to temperature
  • Linear power amplifier insensitive to temperature

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] The specific embodiments of the present invention are described below to facilitate those skilled in the art to understand the present invention, but it should be clear that the present invention is not limited to the scope of the specific embodiments. For those skilled in the art, as long as various changes Such changes are obvious within the spirit and scope of the present invention as defined and determined by the appended claims, and all inventions and creations utilizing the inventive concept are within the scope of protection.

[0033] Embodiments of the present invention provide a temperature-insensitive linear power amplifier, such as figure 1 As shown, including input matching network, common source temperature compensation power supply monitoring network, cascode feedback amplification network, dual common gate temperature compensation power supply network and output matching network;

[0034] The input end of the input matching network is used as the radio fr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a linear power amplifier insensitive to temperature, which comprises an input matching network, a cascode feedback amplification network, a double-cascode temperature compensation power supply network, a cascode temperature compensation power supply monitoring network and an output matching network. Good inter-stage second harmonic impedance matching can be achieved, the efficiency of the amplifier is improved, the amplifier can adapt to temperature fluctuation and power dynamic fluctuation in combination with a cascode self-adaptive bias power supply network, and the amplifier has the advantages of being high in gain, linearity, efficiency and output power and further has a power supply monitoring function.

Description

technical field [0001] The invention belongs to the technical field of wireless communication and integrated circuits, and in particular relates to a design of a linear power amplifier that is not sensitive to temperature. Background technique [0002] With the rapid development of wireless communication and wireless local area network (WLAN), RF front-end transmitters are also developing in the direction of high performance, high integration, high power and low power consumption. Therefore, the market urgently needs high gain, high linearity, low power consumption linear power amplifier chips. Since the GaAs pHEMT process has low cost characteristics compared to the GaN process and better frequency characteristics than the GaAs HBT process, the research and development of mid-power linear power amplifier chips based on GaAs pHEMT has received extensive attention. [0003] Existing solutions based on GaAs pHEMT process linear amplifier chips have some deficiencies, mainly r...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H03F1/30H03F1/56H03F1/52H03F1/02H03F3/217
CPCH03F1/301H03F1/565H03F1/523H03F1/0205H03F3/2178H03F2203/45302Y02D30/70
Inventor 王测天邬海峰童伟刘莹滑育楠廖学介叶珍黄敏
Owner CHENGDU GANIDE TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products