A p-type nitride epitaxial structure, preparation method and semiconductor device

An epitaxial structure and nitride technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, final product manufacturing, etc., can solve the problem of carrier concentration decline, inability to suppress the self-compensation effect of doping elements, and low activation rate of doping elements and other problems, to achieve the effect of suppressing self-compensation effect, promoting good surface morphology and increasing solubility

Active Publication Date: 2022-07-05
JIANGSU INST OF ADVANCED SEMICON CO LTD
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  • Description
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  • Application Information

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Problems solved by technology

There are two main reasons for the low carrier concentration of P-type GaN materials. On the one hand, the activation rate of doping elements is low; on the other hand, traditional doping methods cannot suppress the self-compensation of doping elements. The concentration of heteroelements often causes the carrier concentration of P-type GaN materials to decrease instead.

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  • A p-type nitride epitaxial structure, preparation method and semiconductor device
  • A p-type nitride epitaxial structure, preparation method and semiconductor device
  • A p-type nitride epitaxial structure, preparation method and semiconductor device

Examples

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preparation example Construction

[0052] The above-mentioned P-type nitride epitaxial structure can be prepared by the following preparation method, including the following steps:

[0053] S1, growing the U-type nitride layer 200 on the substrate 100;

[0054] Specifically, a U-type nitride layer 200 of 1 μm-3 μm is grown on the substrate; the U-type nitride layer 200 makes the foreign substrate transition to a flat GaN material layer;

[0055] S2, growing a P-type nitride pre-layer 300 on the U-type nitride layer 200, wherein the P-type nitride pre-layer 300 is lightly doped with Mg;

[0056] Specifically, a P-type nitride pre-layer 300 with a thickness of 0.5um-1.5 μm is grown on the U-type nitride layer 200; wherein, the doping concentration of Mg element in the P-type nitride pre-layer 300 is 1E18cm -3 -1E19cm -3 ;

[0057] The lightly doped P-type nitride pre-layer 300 avoids the influence of the weak N-type of the U-type nitride layer on the subsequent P-type layer, and eliminates the influence of the...

Embodiment 1

[0070] This embodiment prepares and tests the P-type GaN epitaxial structure, which specifically includes the following steps:

[0071] 1) A 2um U-type GaN layer is grown on a sapphire substrate;

[0072] 2) Grow a 1um P-type GaN pre-layer on the U-type GaN layer, where the doping concentration of Mg is about 1E19cm -3 ;

[0073] 3) Set the growth temperature to 1050°C, pass in the gallium source, and grow the undoped GaN layer for 15s;

[0074] 4) Turn off the gallium source, pass in the indium source and the silicon source, cool down to 950 ℃ to grow the co-doped low acceptor layer, the growth time is 5s, where, In / Ga (molar ratio)=2, the doping concentration of Si is 5E17cm -3 ;

[0075] 5) Turn off the indium source and the silicon source, only pass in the magnesium source, and grow the Mg doping incorporated layer for 5s, where the doping concentration of Mg is 5E20cm -3 ;

[0076] 6) According to steps 3), 4) and 5), the P-type GaN composite layer is formed by cycli...

Embodiment 2

[0094] In order to further illustrate the function of the P-type GaN pre-layer in the present invention, the thickness of the P-type GaN pre-layer is changed in this embodiment compared with Embodiment 1, and the rest is the same as that of Embodiment 1;

[0095] Result: Under the test condition of the Hall current of 1uA, the Hall effect test is carried out:

[0096] 1) When the thickness of the P-type GaN pre-layer is 0.5um, the doping concentration of Mg is about 1E18cm -3 , the carrier concentration of the prepared P-type GaN layer is 5.4E18cm -3 ;

[0097] 2) When the thickness of the P-type GaN pre-layer is 1.5um, the doping concentration of Mg is about 1E19cm -3 , the carrier concentration of the prepared P-type GaN layer is 6.2E18cm -3 ;

[0098] The results show that compared with the non-P-type GaN pre-layer in Comparative Example 1, the two thickness pre-layers of Example 2 have higher carrier concentrations, which further proves that the P-type GaN pre-layer ha...

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Abstract

The invention discloses a P-type nitride epitaxial structure, a preparation method and a semiconductor device, comprising: a substrate; and a U-type nitride layer, a P-type nitride pre-layer and a P-type nitride layer sequentially grown on the substrate Nitride composite layer; wherein, the P-type nitride pre-layer is a lightly doped Mg nitride layer; the P-type nitride composite layer includes a periodic structure of a non-doped nitride layer, a co-doped low-stress nitride layer The main layer and the Mg-doped incorporation layer, the non-doped nitride layer, the co-doped low acceptor layer and the Mg-doped incorporated layer in a single cycle grow sequentially; the Mg-doped incorporated layer is heavily doped with Mg nitride layer; the co-doped low acceptor layer is a Si-doped indium nitride layer. The invention can suppress the self-compensation effect of the dopant and increase its activation rate, thereby increasing the carrier concentration of the P-type nitride material.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a P-type nitride epitaxial structure, a preparation method and a semiconductor device. Background technique [0002] Due to its excellent properties, GaN material has become an important material for the manufacture of light-emitting devices, high-temperature high-power devices and ultraviolet detectors. P-type doping is an essential and important link in the fabrication of GaN devices, so it has attracted the attention of many research groups. [0003] Despite the continuous development of technology in recent years, the carrier concentration of P-type GaN materials in the current industry is still much lower than that of N-type GaN. With the development of high-performance GaN devices, the limitation has become more and more serious. There are two main reasons for the low carrier concentration of P-type GaN materials. On the one hand, the activation rate of doping eleme...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/0254H01L21/0257H01L21/02458H01L21/0262Y02P70/50
Inventor 王国斌周溯沅
Owner JIANGSU INST OF ADVANCED SEMICON CO LTD
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