Semiconductor structure and forming method thereof

Abstract

The invention discloses a semiconductor structure and a forming method thereof, and the semiconductor structure comprises a first device structure which comprises a first substrate and a first device formed on the first substrate, the first device comprises a first channel layer structure located on the first substrate, a first device gate structure crossing the first channel layer structure, and first source-drain doped regions located in the first channel layer structure on the two sides of the first device gate structure; the second device structure is positioned on the front surface of the first device structure and comprises a second substrate positioned on the first device structure and a second device formed on the second substrate; the second device comprises a second channel layer structure located on the second substrate, a second device gate structure crossing the second channel layer structure, and second source-drain doped regions located in the second channel layer structure on the two sides of the second device gate structure; projections of the second channel layer structure and the first channel layer structure on the first substrate are not vertically intersected. According to the invention, electrical leading-out of the first device can be realized.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular, to a semiconductor structure and a method for forming the same. Background technique [0002] In semiconductor manufacturing, with the development trend of VLSI, the feature size of integrated circuits continues to decrease. In order to accommodate the reduction in feature size, the channel length of MOSFETs has also been shortened accordingly. However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, so the control ability of the gate to the channel becomes worse, and the gate voltage pinches off the channel. Difficulty is also increasing, making the phenomenon of subthreshold leakage (subthreshold leakage), the so-called short-channel effects (short-channel effects, SCE) more likely to occur. [0003] Therefore, in order to better adapt to the reduction of feature...

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Problems solved by technology

However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, so the control ability of the gate to the channel becomes worse, and the gate voltage pinches off the channel. The difficulty is also increasing, making the phenomenon of subthreshold leakage (subthreshold leakage), the so-called short-channel effects (short-channel effects, SCE) more prone to occur

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