Black silicon ultraviolet PIN type photoelectric sensor based on micro-nano composite structure

A technology of photoelectric sensors and composite structures, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as black silicon structures that are rarely reported

Pending Publication Date: 2022-02-18
ZHONGBEI UNIV
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Problems solved by technology

Black silicon discovered in 1998 has the characteristics of silicon-based substrate, easy preparation and high infrared absorption. It may become a new material for preparing high-performance infrared detectors. However, in the field of silicon-based PIN photodetectors, black silicon The application of silicon structures is rarely reported

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  • Black silicon ultraviolet PIN type photoelectric sensor based on micro-nano composite structure
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  • Black silicon ultraviolet PIN type photoelectric sensor based on micro-nano composite structure

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Embodiment Construction

[0023] In order to make the objects and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the examples. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0024] like Figure 1-Figure 3 As shown, the embodiment of the present invention provides a kind of black silicon ultraviolet PIN type photoelectric sensor based on micro-nano composite structure, by silicon substrate 1, the black silicon structure 2 that is arranged on the front side of silicon substrate 1, is positioned at silicon substrate 1 front side The P-type doped region 4, the N-type doped region 5 located on the back of the silicon substrate 1, the aluminum oxide film 3 covering the black silicon structure 2, and the gold electrode arranged on the silicon substrate 1 and the black silicon structure 2 6, the black silicon structure 2 i...

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Abstract

The invention discloses a black silicon ultraviolet PIN type photoelectric sensor based on a micro-nano composite structure. The sensor is composed of a black silicon structure arranged on the front surface of the silicon substrate, the P-type doped region positioned on the front surface of the silicon substrate, the N-type doped region positioned on the back surface of the silicon substrate, the aluminum oxide film covering the black silicon structure, and the gold electrodes arranged on the silicon substrate and the black silicon structure, and the black silicon structure is formed by compounding a micron structure and a nano structure; the micron structure is photoetched into a corresponding pattern through an MEMS process, and then is formed through Bosch etching; and the nanostructure is formed by forming a corresponding pattern on the basis of the micron structure by adopting a photoetching process and then performing plasma immersion etching. According to the invention, the detection range of the photoelectric sensor is expanded to a near ultraviolet light range so that the photoelectric sensor has ideal quantum efficiency and response speed while low reflectivity is ensured.

Description

technical field [0001] The invention relates to the field of photoelectric sensors, in particular to a black silicon ultraviolet PIN photoelectric sensor based on a micro-nano composite structure. Background technique [0002] With the rapid development of microelectronic technology, related technologies and processes have also promoted the progress of optoelectronic technology. In optoelectronic technology, detection is like the "human eye", which is an indispensable and important technical means for people to explore and reveal the unknown world. . Among many detection devices or equipment, semiconductor detectors have the advantages of small size, light weight, anti-vibration, high efficiency, low power consumption, long life, and wide spectral range due to the use of semiconductor materials, and become the best choice for optical signal detection. Important "carrier", semiconductor photodetector is based on the basic physical phenomenon of photogenerated carriers, a pho...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/105H01L31/0236H01L31/028H01L31/0352H01L31/18
CPCH01L31/105H01L31/028H01L31/02363H01L31/0352H01L31/1804
Inventor 张增星刘丹薛晨阳赵宙
Owner ZHONGBEI UNIV
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