Additives for Alkaline Polishing of Silicon Wafers and Their Applications
A silicon wafer alkali and additive technology, applied in water-based dispersants, sustainable manufacturing/processing, final product manufacturing, etc., to achieve pollution-free and controllable polishing, increase slurry tension, and gain battery conversion efficiency
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Embodiment 1
[0042] 1) Preparation of additives: 0.75 parts by mass of gelatin, 2 parts by mass of acrylamide, 0.5 parts by mass of benzyltriethylammonium chloride, 3 parts by mass of sodium p-aminosalicylate, 4 parts by mass of ammonium thiocyanate, 3 parts by mass of Alkyl glycosides and 0.2 parts by mass of sodium benzoate were added to 86.55 parts by mass of deionized water, and mixed uniformly to prepare additives;
[0043] 2) Preparation of polishing liquid: add the additive prepared in step 1) into the potassium hydroxide solution, and mix evenly to prepare a polishing liquid; the mass ratio of the additive to the potassium hydroxide solution is 1:100; The mass percentage of potassium is 3%;
[0044] 3) Alkali polishing: use the polishing liquid prepared in step 2) to polish the single crystal silicon wafer, and the temperature of the polishing treatment is controlled at 70° C. and the time is controlled at 180s.
[0045] Example 1 The scanning electron microscope image of the back...
Embodiment 2
[0047] 1) Preparation of additives: 1.5 parts by mass of gelatin, 1.5 parts by mass of acrylamide, 1 part by mass of tetrabutylammonium chloride, 3 parts by mass of sodium p-aminosalicylate, 5 parts by mass of ammonium thiocyanate, 4 parts by mass of alkyl Glycosides and 0.2 parts by mass of sodium benzoate were added to 83.8 parts by mass of deionized water, and mixed evenly to prepare additives;
[0048] 2) Preparation of polishing liquid: Add the additive prepared in step 1) to the potassium hydroxide solution, and mix it evenly to prepare a polishing liquid; the mass ratio of the additive to the potassium hydroxide solution is 0.75:100; The mass percentage of potassium is 2.5%;
[0049] 3) Alkali polishing: use the polishing liquid prepared in step 2) to polish the single crystal silicon wafer, and the temperature of the polishing treatment is controlled at 60°C and the time is controlled at 240s).
[0050] Example 2 The scanning electron microscope image of the back of t...
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