A stepped trench lateral insulated gate bipolar transistor structure and manufacturing method

A technology of bipolar transistor and manufacturing method, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components and other directions, can solve problems such as voltage bounce, PN junction conduction, etc., to improve applicability, improve performance, improve Pressure-resistant effect

Active Publication Date: 2022-04-26
晶芯成(北京)科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when the emitter voltage is too large, the PN junction will be turned on, resulting in a voltage rebound phenomenon. Therefore, providing LIGBTs with high voltage resistance and low driving power consumption has become a key research

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  • A stepped trench lateral insulated gate bipolar transistor structure and manufacturing method
  • A stepped trench lateral insulated gate bipolar transistor structure and manufacturing method
  • A stepped trench lateral insulated gate bipolar transistor structure and manufacturing method

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Embodiment Construction

[0062]The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0063] A lateral insulated gate bipolar transistor (Lateral Insulated Gate Bipolar Transistor, LIGBT) provided by the present invention has excellent performance and can be widely used in various fields such as communication, transportation, energy, medicine, household appliances, and aerospace.

[0064] see figure 1 As shown, in an embodiment of the present invention, the lateral insulated gate bipolar transistor includes a substrate 10, a drift region 103 and a fi...

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Abstract

The invention discloses a stepped trench lateral insulated gate bipolar transistor structure and a manufacturing method, and the lateral insulated gate bipolar transistor at least includes: a substrate; a drift region arranged on the substrate; a first The well region is arranged side by side with the drift region; the stepped shallow trench isolation structure is arranged in the drift region, and the stepped shallow trench isolation structure includes at least a first subsection and a second subsection, the first The subsection is arranged on the second subsection, and the width of the first subsection is larger than the width of the second subsection; the first doped region is arranged on the drift region; the second doped region , arranged on the first well region; the drain, arranged on the first doped region; the source, arranged on the second doped region; and the gate, arranged in the stepped shallow trench isolation structure and the first well region. Through the stepped trench lateral insulated gate bipolar transistor structure and manufacturing method provided by the present invention, the performance of the transistor can be improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a stepped trench lateral insulated gate bipolar transistor structure and a manufacturing method. Background technique [0002] In recent years, due to the gradual promotion of 5G communication technology, the demand for power semiconductor devices is also increasing. As a commonly used power device, an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) has attracted widespread attention because of its simple manufacturing process and easy implementation. Among them, the Lateral Insulated Gate Bipolar Transistor (LIGBT) has the advantages of gate voltage control, high current density, and small conduction voltage drop, and is widely used in new energy and various electronic consumption fields. However, when the emitter voltage is too high, the PN junction will be turned on, resulting in a voltage bounce phenomenon. Therefore, providing ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/06H01L21/331
CPCH01L29/7393H01L29/0649H01L29/0653H01L29/66325
Inventor 叶家明葛成海李庆民林滔天祝进专
Owner 晶芯成(北京)科技有限公司
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