Infrared detector mirror image pixel and infrared detector based on CMOS process

Abstract

The invention relates to an infrared detector mirror image pixel and an infrared detector based on CMOS process, the mirror image pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure which are both prepared by using the CMOS process, and the CMOS infrared sensing structure is directly prepared on the CMOS measurement circuit system; the CMOS infrared conversion structure is electrically connected with the CMOS measurement circuit system through first columnar structures and a supporting base; the beam structure is located on the side, close to the substrate, of an absorption plate, insulated second columnar structures and a patterned metal structure are arranged between the absorption plate and the beam structure, at least part of the reflection plate is located in the orthographic projection area of the patterned metal structure, and gaps are formed between the patterned metal structure and the beam structure and between the patterned metal structure and the absorption plate in the direction perpendicular to the substrate. According to the technical scheme, the problems that a traditional MEMS process infrared detector is low in performance, low in pixel scale, low in yield and the like are solved.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, and in particular, to an infrared detector mirror image pixel and an infrared detector based on a CMOS process. Background technique [0002] Surveillance market, vehicle auxiliary market, home market, intelligent manufacturing market and mobile phone applications all have strong demand for uncooled high-performance chips, and there is a certain degree of chip performance, consistency of performance and product price. It is estimated that there are potential needs of more than 100 million chips every year, and the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared detector adopts a combination of measurement circuit and infrared sensing structure. The measuring circuit is fabricated by CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal Oxide Semiconductor) process, while the infrared sensing structure uses M...

AI Technical Summary

Problems solved by technology

[0012] In order to solve the above-mentioned technical problems or at least partly solve the above-mentioned technical problems, the present disclosure provides an infrared detector image element and an infrared detector based on a CMOS process, Through the technical solution of the present disclosure, the problems of low performance, low pixel scale, and low yield rate of traditional MEMS process infrared detectors are solved, and the accuracy of detection results is improved.

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