Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of solid precursor source sublimation device and method for semiconductor processing

A sublimation device and semiconductor technology, applied in the direction of sublimation, separation methods, chemical instruments and methods, etc., can solve the problems of increasing the frequency of equipment shutdown, affecting the utilization rate of precursor sources, and unfavorable vapor deposition, so as to provide service life and reduce The effect of changing the frequency of bottle change and stabilizing the volatilization area

Active Publication Date: 2021-12-28
ZHEJIANG DAUGHTER VESSEL SCI & TECH CO LTD
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compaction and low-resistance channels will seriously affect the utilization rate of the solid precursor source in the source bottle, increasing the frequency of equipment shutdown, which is very unfavorable for vapor deposition

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of solid precursor source sublimation device and method for semiconductor processing
  • A kind of solid precursor source sublimation device and method for semiconductor processing
  • A kind of solid precursor source sublimation device and method for semiconductor processing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Embodiment 1: A kind of solid precursor source sublimation device for semiconductor processing (see attached figure 1 to attach image 3 ), including a storage box 1, a tray 2 installed in the storage box, an electric heating temperature control plate 3 installed at the bottom of the tray, a number of storage tanks 4 for loading solid-state precursor sources are densely covered on the tray, and several storage tanks are arranged in the storage box The upper and lower trays are arranged at intervals, the gap between the upper and lower adjacent trays forms a ventilation cavity, the uppermost tray and the top of the storage box form a ventilation cavity, and a ventilation groove 9 is provided on one side of the tray; the ventilation on the upper and lower adjacent trays One of the slots is on the left side of the tray, and the other is on the right side of the other tray. The ventilation slots connect all the ventilation chambers together to form a serpentine ventilation ...

Embodiment 2

[0040] Embodiment 2: A kind of solid precursor source sublimation device for semiconductor processing (see attached Figure 4 , attached Figure 5 ), its structure is similar to that of Embodiment 1, the main difference is that in this embodiment, an adjustment plate 16 is arranged on the upper part of the longitudinal baffle plate, the adjustment plate can be rotated, and a push-pull rod 17 is installed in the storage box, and the adjustment plates are all connected with the push-pull rod. The movement of the push-pull rod drives the adjustment plate to rotate, and a plurality of driving rods 18 are installed on one side of the adjustment plate and the material storage tank one by one. The lower end of the driving rod is placed in the material storage tank, and the piston cylinder 19 is installed outside the storage box. Magnetic block 20 is installed, and the slide block 21 that can attract each other with magnetic block is installed in the storage box, and slide block can s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a solid precursor source sublimation device and method for semiconductor processing, aiming to solve the problems of unstable volatilization and sublimation of the solid precursor source and low utilization rate of the solid precursor source. The invention includes a storage box, several trays installed in the storage box, an electric heating temperature control plate installed at the bottom of the tray, and a number of storage tanks for loading solid-state precursor sources are densely covered on the tray, and the storage boxes form a serpentine ventilation flow The storage box is provided with a carrier gas inlet and a mixed steam outlet, and the two ends of the air flow channel are respectively connected with the carrier gas inlet and the mixed steam outlet. This electrothermal solid-state precursor source storage and sublimation device can provide uniform and stable thermal energy for the volatilization and sublimation of the solid-state precursor source, and prevent the formation of low-resistance channels. The source can still be used, and the utilization rate of the solid precursor source is improved while providing a stable concentration of the solid precursor source vapor.

Description

technical field [0001] The invention relates to a semiconductor processing technology, more specifically, it relates to a solid precursor source sublimation device and method for semiconductor processing. Background technique [0002] Precursors are the main raw materials for semiconductor thin film deposition processes. IC precursors can be summarized as: used in semiconductor manufacturing processes, carrying target elements, in gaseous or volatile liquid state, with chemical and thermal stability, and a class of substances with corresponding reactivity or physical properties. In the semiconductor manufacturing process including thin film, lithography, interconnection, doping technology, etc., the precursor is mainly used in vapor deposition (including physical deposition PVD, chemical vapor deposition CVD and atomic vapor deposition ALD) to form semiconductor manufacturing requirements various thin film layers. In addition, the precursor can also be used for semiconduct...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/448B01D7/00
CPCC23C16/4481B01D7/00
Inventor 谈益强朱梦玉薛剑
Owner ZHEJIANG DAUGHTER VESSEL SCI & TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com