Semiconductor device and heat sink bonding method

A semiconductor and device technology, applied in the field of semiconductor devices and heat sink bonding, can solve problems affecting the polarization performance of semiconductor devices, semiconductor device cracks, semiconductor device distortion, etc., to reduce stress, reduce the influence of stress, reduce stress the effect of accumulation

Active Publication Date: 2021-09-03
度亘核芯光电技术(苏州)有限公司
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The semiconductor device is thin and slender. When it is bonded to the heat sink, some stress generated by welding can easily cause local distortion of the semiconductor device, which will affect the polarization performance of the semiconductor device at the slightest level, and cause cracks or breakage of the semiconductor device at the worst.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and heat sink bonding method
  • Semiconductor device and heat sink bonding method
  • Semiconductor device and heat sink bonding method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application.

[0028] In the description of this application, it should be noted that the orientation or positional relationship indicated by the terms "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, or the usual placement of the application product when it is used. Orientation or positional relationship is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present application. In addition, the terms "first", "second", etc. are only used for distinguishing descriptions, and should not be const...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a semiconductor device and heat sink bonding method, and relates to the technical field of semiconductors, and the method comprises the steps: forming a first metal layer on an epitaxial layer of the semiconductor device, wherein the epitaxial layer is provided with at least one current injection region and non-current injection regions arranged on the two sides of the current injection region, a spacer region is arranged between the current injection region and the non-current injection region, and the first metal layer covers the current injection region, the non-current injection region and the spacer region; forming a second metal layer on the first metal layer, and enabling the second metal layer to be located on the non-current injection region; forming a solder layer on the second metal layer to enable the solder layer to cover the first metal layer and the second metal layer; and welding the heat sink and the solder layer. When the semiconductor device is bonded with the heat sink, the second metal layer plays a supporting role, the second metal layers are arranged on the two sides of the current injection region, the current injection region is not stressed, the welding flux for welding and melting is in a free flow state, and the stress influence on the semiconductor device during packaging is reduced.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular to a method for bonding a semiconductor device and a heat sink. Background technique [0002] Semiconductor devices generate heat during operation, and failure to dissipate heat in time will have an impact on the performance of semiconductor devices. Generally, the semiconductor device is dissipated by welding a heat sink on the semiconductor device and conducting the heat of the semiconductor device through the heat sink. [0003] The semiconductor device is thin and slender. When it is bonded to the heat sink, some stress generated by welding can easily cause local distortion of the semiconductor device, which will affect the polarization performance of the semiconductor device at the slightest level, and cause cracks or breakage of the semiconductor device at the worst. Contents of the invention [0004] The purpose of the embodiments of the present applicatio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/50H01L23/367B23K1/00
CPCH01L21/50H01L23/367B23K1/0008B23K2101/40
Inventor 杨国文王希敏
Owner 度亘核芯光电技术(苏州)有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap