Numerical simulation method and system for rapid ionization device

Abstract

The invention provides a numerical simulation method and system for a rapid ionization device, and the method comprises the steps: determining a to-be-simulated region of the fast ionization device and the size of the to-be-simulated region, dividing the to-be-simulated region into a plurality of grids through line segments which are perpendicular to each other, according to the doping condition of the rapid ionization device corresponding to each grid point, giving a doping concentration value to each grid point; selecting a drift diffusion model, corresponding model parameters, an electron and hole mobility model, a recombination rate model and a generation rate model to solve device characteristics in the dynamic triggering process of the rapid ionization device; discretizing a differential equation in the drift diffusion model based on the doping concentration value of each grid point to obtain a discretized drift diffusion model; and simultaneously solving device characteristic parameters on each grid point by adopting a Newton iteration method based on the discretized model so as to finish numerical simulation of device characteristics at different moments in the dynamic triggering process of the device. The method and system can be used for simulating the dynamic process of the device.

Description

technical field [0001] The invention belongs to the field of semiconductor analysis, and more specifically relates to a numerical simulation method and system for fast ionization devices. Background technique [0002] Fast ionization devices are power semiconductor devices with the fastest turn-on speed among non-photonic semiconductor devices, and they have broad application prospects in the field of pulse power technology. The conduction mechanism of fast ionization devices is the phenomenon of delayed avalanche breakdown, and this special physical phenomenon is still under study. For the study of delayed avalanche breakdown phenomenon, it is necessary to simulate the physical process inside the device by means of numerical simulation of semiconductor devices. In addition, through the numerical simulation of semiconductor devices, the optimal characteristic parameters of the devices can be determined, and then used in the production and preparation of fast ionization devi...

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Problems solved by technology

[0005] In view of the defects of the prior art, the purpose of the present invention is to provide a numerical simulation method and system for fast ionization devices, aiming to solve the problem that the existing software is not suitable for fast ionization device simulation

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