Deep ultraviolet AlGaN-based light emitting diode with coupled quantum well structure

A technology for coupling quantum wells and light-emitting diodes, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as low luminous efficiency, achieve the effects of suppressing efficiency decline, reducing Auger recombination rate, and increasing total spontaneous emission recombination rate Effect

Active Publication Date: 2021-06-11
江苏第三代半导体研究院有限公司
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Problems solved by technology

[0003] In view of the low luminous efficiency of deep ultraviolet nitride LEDs at present, we propose a coupled quantum well structure design, which can enhance the TE / TM mode spontaneous emission recombination rate of c-plane LEDs, improve the internal quantum efficiency of LED devices, and Suppressing the efficiency droop effect of nitride LED devices

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  • Deep ultraviolet AlGaN-based light emitting diode with coupled quantum well structure
  • Deep ultraviolet AlGaN-based light emitting diode with coupled quantum well structure
  • Deep ultraviolet AlGaN-based light emitting diode with coupled quantum well structure

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Embodiment 1

[0017] This embodiment discloses a deep-ultraviolet AlGaN-based light-emitting diode with a coupled quantum well structure. By replacing the traditional well layer with a coupled well layer, the energy band structure of the quantum well is adjusted, and the radiation recombination region of electrons and holes in the well layer is expanded, thereby reducing Auger recombination rate, increase the total spontaneous emission recombination rate, improve the internal quantum efficiency of LED devices, and suppress the effect of device efficiency drop.

[0018] The embodiment of the present invention has an ultraviolet nitride light-emitting diode with a coupled quantum well structure, such as figure 1 As shown, it includes substrate 10 , buffer layer 20 , superlattice layer 30 , n-type semiconductor layer 40 , multiple quantum well structure 50 , p-type semiconductor layer 60 , and p-type ohmic contact layer 70 from bottom to top. Among them, the multi-quantum well structure 50 is ...

Embodiment 2

[0029] This embodiment discloses a deep-ultraviolet AlGaN-based light-emitting diode with a coupled quantum well structure. The difference from Embodiment 1 is that the potential well layer 52 is composed of five layers, which are Al from bottom to top. x Ga 1-x N well layer 521, Al y Ga 1-y N isolation layer 522, Al x Ga 1-x N well layer 523 composition, Al y Ga 1-y N isolation layer 524, Al x Ga 1-x The N-well layer 525 is constituted as Figure 5 shown.

[0030] Figure 6 is the internal quantum efficiency of the coupled quantum well structure (sample XA) and the traditional quantum well structure (sample B and sample C) with potential well layers having a 5-layer structure. The n-type semiconductor layer of sample XA is n-type Al 0.55 Ga 0.45 N material; barrier layer is 8nm thick Al 0.5 Ga 0.5 N; the coupling well layer is sequentially 1 nm thick Al 0.35 Ga 0.65 N, 2nm thick Al 0.5 Ga 0.5 N, 1 nm thick Al 0.35 Ga 0.65 N, 2nm thick Al 0.5 Ga 0.5 N, 1 ...

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Abstract

The invention discloses a deep ultraviolet AlGaN-based light emitting diode with a coupled quantum well structure. The deep ultraviolet AlGaN-based light emitting diode at least comprises an n-type semiconductor layer, a multi-quantum well structure and a p-type semiconductor layer, wherein the multi-quantum well structure is formed by periodically overlapping a barrier layer and a coupled AlGaN well layer, and the deep ultraviolet AlGaN-based light emitting diode is characterized in that the coupled AlGaN well layer at least comprises a three-layer structure, namely an Al<x>Ga<1-x>N well layer, an Al<y>Ga<1-y>N isolation layer and an Al<x>Ga<1-x>N well layer from bottom to top in sequence. Through the structural design of the coupling well layer, the spontaneous radiation recombination rate of a TE / TM mode of a c-surface LED is enhanced, the internal quantum efficiency of an LED device is improved, and the efficiency reduction effect of a nitride LED device is inhibited, so that the optical performance of the deep ultraviolet nitride light-emitting diode is improved.

Description

technical field [0001] The invention relates to the field of deep ultraviolet nitride LEDs, in particular to AlGaN-based quantum well structure deep ultraviolet LEDs with improved luminous efficiency. Background technique [0002] AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) have broad application prospects in water purification, sterilization, skin treatment, etc., and have attracted widespread attention. So far, the external quantum efficiency of AlGaN-based DUV-LED dies with p-GaN contact layer is generally less than 7% in the wavelength range of 250-280 nm. Compared with high-efficiency nitride blue LEDs, AlGaN-based DUV-LEDs have low external quantum efficiency due to their high acceptor ionization energy, strong absorption of p-GaN contact layer, and unique polarization characteristics. To solve these problems, researchers have proposed various methods to improve the luminous efficiency of AlGaN-based DUV-LEDs. For example, replace the p-GaN contac...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/32
CPCH01L33/06H01L33/32
Inventor 李毅朱友华王美玉胡涛葛梅
Owner 江苏第三代半导体研究院有限公司
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