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Read-write control circuit used in STT-MRAM

A technology for reading and writing control and writing circuits, applied in information storage, static memory, digital memory information, etc., can solve the problem of high power consumption, reduce the writing error rate, reduce the writing time, and avoid the effect of repeated writing

Pending Publication Date: 2021-05-07
中电海康无锡科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention provides a read-write control circuit used in STT-MRAM, which solves the problem of high power consumption caused by the write circuit in the related art

Method used

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  • Read-write control circuit used in STT-MRAM
  • Read-write control circuit used in STT-MRAM

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Embodiment Construction

[0025] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and examples.

[0026] In order to enable those skilled in the art to better understand the solutions of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only Embodiments of some, but not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0027] It should be noted that the terms "f...

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Abstract

The invention relates to the technical field of integrated circuits, and particularly discloses a read-write control circuit used in an STT-MRAM, which comprises a plurality of rows of read-write control units, and each row of read-write control unit comprises a write circuit connected with a storage array and used for controlling whether input data is written into the storage array or not according to a control signal; a reading circuit connected with the storage array and used for reading the storage data in the storage array; a storage array used for controlling gating of the storage units and storing the input data written by the writing circuit into the gated storage units to form storage data; a comparator respectively connected with the writing circuit and the latch and used for comparing the storage data temporarily stored in the latch with the input data and generating a control signal; and the latch used for acquiring the storage data read by the reading circuit and temporarily storing the storage data. According to the read-write control circuit used in the STT-MRAM, the write power consumption is reduced, and the write error rate is reduced.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a read-write control circuit used in STT-MRAM. Background technique [0002] In recent years, with the rise of the Internet of Things, the popularization of the mobile Internet and the rapid development of cloud computing technology, a large amount of new data is generated on hundreds of millions of smart devices, various sensors and PCs, and these data need to pass through the network Transfer to the background data center for centralized storage and processing. In today's big data era of explosive data growth in the information world, the rapid growth of big data applications in terms of scale and complexity poses new challenges to existing storage technologies. Therefore, research and development of new types of memory has become a worldwide research One of the hot spots. However, in traditional storage technologies, dynamic random access memory (DRAM) is highly ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/16G11C7/10
CPCG11C11/16G11C7/1087
Inventor 程学农李学明姜岩峰张光军
Owner 中电海康无锡科技有限公司
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