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An unbiased photoelectrochemical hydrogen production system and application based on ingan nanopillar photoelectrodes on graphene

A hydrogen production system, photoelectrochemical technology, applied in electrodes, nanotechnology, gaseous chemical plating, etc., can solve the problems of inability to achieve broad spectrum absorption, inability to form tandem electrodes, and opaque substrates, etc. Biased photoelectric water splitting to produce hydrogen, improve photoelectric conversion efficiency, and inhibit the effect of recombination

Active Publication Date: 2022-05-24
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, InGaN nanopillars are mainly grown on opaque Si substrates, which has certain obstacles to the construction of unbiased photocatalytic systems, mainly reflected in the opacity of the substrates, and the inability to form series electrodes, so that it is impossible to achieve wide-spectrum photocatalysis. absorption and generation of high photovoltage

Method used

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  • An unbiased photoelectrochemical hydrogen production system and application based on ingan nanopillar photoelectrodes on graphene
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  • An unbiased photoelectrochemical hydrogen production system and application based on ingan nanopillar photoelectrodes on graphene

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Embodiment 1

[0042]A construction of a bias-free photoelectrochemical hydrogen production system based on an InGaN nano-pillar photoelectrode on graphene, comprising the following steps:

[0043] (1) Preparation of photoanode: using sapphire as the substrate, transfer a single-layer graphene film on the substrate by wet transfer, spin-coat PMMA solution after drying to flatten the graphene, dry at 120 degrees Celsius for 5 minutes, and then sequentially Soak with acetone for 3 times for 15 min each time, and soak in isopropanol for 5 min to wash off the PMMA to obtain the substrate / graphene. Then, the molecular beam epitaxy growth process was used to control the substrate / graphene temperature to be 980 °C, the substrate / graphene rotational speed to be 10 r / min, and the Ga beam equivalent pressure to be 1×10 -7 Torr, In beam equivalent pressure is 2.0×10 -8 Torr, the nitrogen flow rate was 2sccm, the plasma source power was 400W, and the growth time was 3h, and the obtained InGaN nanopilla...

Embodiment 2

[0051] A construction of a bias-free photoelectrochemical hydrogen production system based on an InGaN nano-pillar photoelectrode on graphene, comprising the following steps:

[0052] (1) Preparation of photoanode: Quartz was used as the substrate, and the double-layer graphene film was transferred on the substrate by wet transfer. After drying, spin-coating PMMA solution to flatten the graphene, and drying at 120 degrees Celsius for 5 minutes followed by Soak with acetone for 3 times for 15 min each time, and soak in isopropanol for 5 min to wash off the PMMA to obtain the substrate / graphene. Then, the molecular beam epitaxy growth process was used to control the substrate / graphene temperature to be 950 °C, the substrate / graphene rotational speed to be 10 r / min, and the Ga beam equivalent pressure to be 2 × 10 -7 Torr, In beam equivalent pressure is 3.5×10 -8 Torr, the nitrogen flow rate was 2sccm, the plasma source power was 400W, and the growth time was 3h, and the proport...

Embodiment 3

[0058] A construction of a bias-free photoelectrochemical hydrogen production system based on an InGaN nano-pillar photoelectrode on graphene, comprising the following steps:

[0059] (1) Preparation of photoanode: using sapphire as the substrate, transfer three layers of graphene film on the substrate by wet transfer, spin-coat PMMA solution after drying to flatten the graphene, and dry at 120 degrees Celsius for 5 minutes in turn. Soak with acetone for 3 times for 15 min each time, and soak in isopropanol for 5 min to wash off the PMMA to obtain the substrate / graphene. Then, the molecular beam epitaxy growth process was used to control the substrate / graphene temperature to be 900 °C, the substrate / graphene rotational speed to be 10 r / min, and the Ga beam equivalent pressure to be 2.5×10 - 7 Torr, In beam equivalent pressure is 5×10 -8 Torr, the nitrogen flow rate is 2sccm, the plasma source power is 400W, and the growth time is 3h, and the proportion of In atoms in the obt...

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Abstract

The invention discloses an unbiased photoelectrochemical hydrogen production system based on an InGaN nanocolumn photoelectrode on graphene and its application. The system includes a photoanode, a photocathode, an electrolyte, a light source, and an electrolytic cell. The structure of the photoanode from bottom to top is the substrate, graphene on the substrate, and InGaN nanocolumns grown on the graphene. The photocathode structure from top to bottom is the substrate and the InGaN nanocolumns grown on the substrate; the use of graphene in the present invention not only broadens the selection range of the substrate, but also can be used as a conductive electrode, reducing the cost; graphene It can also form a Schottky barrier with the nanocolumn, which is beneficial to the separation of photogenerated carriers, enhances the carrier transport performance, and greatly improves the photoelectric performance of the nanocolumn; at the same time, the light transmission of graphene can prepare InGaN The nano-column integrated photoelectrode can broaden the spectral absorption, increase the photovoltage required for water splitting, and realize the unbiased photoelectric water splitting to produce hydrogen.

Description

technical field [0001] The invention relates to the fields of integration, energy and catalysis of InGaN nano-pillars and photoelectrodes, in particular to a non-biased photoelectrochemical hydrogen production system and application based on an InGaN nano-pillar photoelectrode on graphene. Background technique [0002] Unbiased photoelectrochemical water splitting for hydrogen production shows great potential in solving the global energy crisis and environmental problems. InGaN nanopillars have tunable band gaps (0.65eV~3.4eV), which can adjust light absorption by changing the composition of indium, making them ideal for optoelectrodes. In addition, InGaN nanopillars have band positions suitable for water redox reactions, long charge diffusion distance, high surface area to volume ratio, and excellent theoretical solar-to-hydrogen (STH) efficiency (~27%), making InGaN nanopillars very efficient It is beneficial to photoelectrochemical total water splitting. However, proble...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25B1/04C25B1/55C25B11/053C25B11/091C23C16/34C23C16/50B82Y40/00
CPCC25B1/04C23C16/303C23C16/50B82Y40/00Y02E60/36Y02P20/133
Inventor 李国强刘乾湖林静曾庆浩张志杰莫由天邓曦
Owner SOUTH CHINA UNIV OF TECH
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