IGBT gate driver based on single power supply circuit

A power circuit and circuit technology, applied in the direction of electrical components, electronic switches, pulse technology, etc., can solve the problems of high cost, bulky, and complex structure of the driver, and achieve the effect of simple structure, strong anti-interference ability, and high integration

Pending Publication Date: 2021-03-30
NANJING RAIL TRANSIT SYST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In related technologies, most of the dual power supply methods are used to limit the pulse width input to the IGBT control signal, the structure is complex, and there are many components, which leads to high cost and bulky drive.

Method used

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  • IGBT gate driver based on single power supply circuit
  • IGBT gate driver based on single power supply circuit
  • IGBT gate driver based on single power supply circuit

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Embodiment Construction

[0033] In order to facilitate the understanding of those skilled in the art, the following description of the invention will be made in conjunction with the drawings, and the contents mentioned in the present invention are not limited.

[0034] Refer figure 1 , figure 2 As shown, an IGBT gate driver based on a single supply circuit, comprising: a power supply circuit, an isolation driving, and a fault feedback circuit; wherein

[0035] The power circuit converts the input AC electrically converted to a DC voltage and provides DC + 22V and DC + 6V voltages for isolation-driven and fault feedback circuits;

[0036] The isolation drive and fault feedback circuit receives the DC ± 15V drive signal emitted by the host, converted to the IGBT drive signal output to the IGBT, and generates a fault feedback signal to the host computer; it includes: the isolation drive circuit and fault feedback circuit.

[0037] The fault feedback circuit detects the controlled IGBT status in real time a...

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PUM

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Abstract

The invention discloses an IGBT gate driver based on a single power supply circuit. The IGBT gate driver comprises a power supply circuit, an isolation drive and a fault feedback circuit, the power supply circuit converts input alternating current into direct current and provides DC + 22V voltage and DC + 6V voltage for an isolation drive and fault feedback circuit. The isolation drive and fault feedback circuit receives a DC + / -15V drive signal sent by the upper computer, converts the DC + / -15V drive signal into an IGBT drive signal, outputs the IGBT drive signal to the IGBT, and sends a generated fault feedback signal to the upper computer. The state of the controlled IGBT is detected in real time, and a fault latch signal is generated and sent to the isolation drive and fault feedback circuit. According to the invention, the IGBT is controlled and the state of the IGBT is monitored through the single power supply circuit. Output waveform is controlled through the push-pull circuit,and the circuit has the characteristics of simple structure, high reliability, high action speed and continuous and adjustable waveform.

Description

Technical field [0001] The present invention belongs to the control technology of power electronics and power automation equipment, and is, in particular, a IGBT gate driver based on a single supply circuit. Background technique [0002] At present, domestic and foreign IGBT driver technology is more mature in small and medium-sized power, mainly using digital control mode, functional comparison single; IGBT sets the advantages of MOSFET and GTR, with high input impedance, fast switching speed, good thermal stability , There is a wide range of fields in various fields in various fields in various fields. The use of a good performance driving circuit can shorten the switching time, reduce the switching loss, so that IGBT works in a desired switch state, and it is important to operate the product's operational efficiency, reliability, and security. The IGBT is a voltage controlled device that applies a ten-volt DC voltage between its gate emitter, only the micro-level current flows...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/567H03K17/08
CPCH03K17/567H03K17/08
Inventor 李宝军马剑陈鹏花清源田立岭徐宏武
Owner NANJING RAIL TRANSIT SYST
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