Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Micro LED chip and display panel

A technology of micro-LEDs and chips, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of poor display effect of micro-LEDs, and achieve the effect of improving display effect and avoiding optical crosstalk.

Active Publication Date: 2022-08-02
CHENGDU VISTAR OPTEOLECTRONICS CO LTD
View PDF13 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] An embodiment of the present invention provides a micro light emitting diode chip and a display panel to solve the problem of poor display effect of the existing micro light emitting diodes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Micro LED chip and display panel
  • Micro LED chip and display panel
  • Micro LED chip and display panel

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] see Figure 1-Figure 3 , the micro light-emitting diode chip provided by the first embodiment of the present invention includes a first-type semiconductor layer 10, a light-emitting layer 30, a second-type semiconductor layer 20, a first-type electrode layer 40, a second-type electrode layer 50 and an insulating passivation layer 60 , wherein the first type semiconductor layer 10, the light emitting layer 30, and the second type semiconductor layer 20 are stacked in sequence; the first type electrode layer 40 is located on the sidewall of one side of the first type semiconductor layer 10, 10 ohm contact; the insulating passivation layer 60 covers part of the sidewalls of the first type semiconductor layer 10, the sidewalls and bottom surfaces of the first type electrode layer 40, the sidewalls of the light emitting layer 30, the sidewalls of the second type semiconductor layer 20 and Part of the bottom surface; the second type electrode layer 50 covers the insulating pa...

Embodiment 2

[0059] The display panel provided in the second embodiment of the present invention includes the micro-LED chip provided in the above-mentioned embodiment 1, wherein the structure, function and implementation of the micro-LED chip can refer to the specific description in the above-mentioned embodiment, and will not be repeated here.

[0060] The display panel provided in this embodiment can be applied to any display device with a display function including a micro-LED chip, such as a mobile phone, a tablet computer, a smart watch, an e-book, a navigator, a TV, a digital camera, and the like. The display panel provided in this embodiment also has the same advantages as the micro-LED chip provided in the first embodiment, and details are not described herein again.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
angleaaaaaaaaaa
Login to View More

Abstract

The present invention provides a micro light emitting diode chip and a display panel, wherein the micro light emitting diode chip provided by the present invention includes a first-type semiconductor layer, a light-emitting layer, a second-type semiconductor layer, a first-type electrode layer, and a second-type electrode layer and an insulating passivation layer, the first type semiconductor layer, the light emitting layer and the second type semiconductor layer are stacked in sequence; the first type electrode layer is formed on the sidewall of one side of the first type semiconductor layer; the insulating passivation layer covers the first type of semiconductor layer. Part of the sidewall of the type semiconductor layer, the sidewall and bottom surface of the first type electrode layer, the sidewall of the light emitting layer, the sidewall and part of the bottom surface of the second type semiconductor layer; the second type electrode layer covers the insulating passivation layer, the second The type electrode layer is in ohmic contact with a portion of the bottom surface of the second type semiconductor layer exposed to the insulating passivation layer. The micro-light-emitting diode chip provided by the present invention solves the problems of high transfer difficulty and poor display effect of the existing micro-light-emitting diode chip.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a micro light emitting diode chip and a display panel. Background technique [0002] A micro-light-emitting diode (μLED) display panel is a display panel that integrates micro-light-emitting diode chips with a size below 100 microns on a substrate as display pixels to achieve image display. The diode display panel is a self-luminous display panel. [0003] Due to the large sidewall area of ​​the existing micro-LED chips, there is a problem of optical crosstalk caused by light emission from the sidewalls. The optical crosstalk problem will lead to poor display effect of the display panel. Therefore, the existing micro-LED chips have optical crosstalk. The problem of poor display effect caused. SUMMARY OF THE INVENTION [0004] Embodiments of the present invention provide a micro-LED chip and a display panel, which are used to solve the problem of poor display effect o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/36H01L33/40H01L27/15
CPCH01L33/36H01L33/405H01L27/156H01L33/40H01L27/15H01L33/38H01L33/00H01L25/0753
Inventor 郭恩卿王程功盖翠丽
Owner CHENGDU VISTAR OPTEOLECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products