Semiconductor device unit, manufacturing method thereof and forming device

Abstract

The invention provides a semiconductor device unit and a manufacturing method and a forming device thereof. The unit comprises a laminated layer formed by stacking semiconductor material layers with two doping characteristics, a gate control structure and an insulating passivation layer (31); the laminated layer is of a boss structure, wherein the upper bottom face is smaller than the lower bottomface, and the side face of the boss is of a positive oblique angle or right angle structure. The insulating passivation layer (31) is arranged on the side surface of the laminated layer and is matched with the positive bevel angle or right angle structure to form a cubic structure with the laminated layer; the gate control structure is provided between the insulating passivation layer (31) and the stacked layer. According to the invention, the stress surface is smooth, the stress is uniform, the stress of the insulated gate is small, and large-area interconnection can be realized.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor device unit, a manufacturing method thereof and a device formed therein. Background technique [0002] Semiconductor devices based on semiconductor materials usually achieve specific functions by including P-type and N-type PN junctions or by including metal-semiconductor Schottky junctions and metal-oxide-semiconductor gate control structures. Features. These structures are often achieved by local doping or thin-film processes. Semiconductor devices use these structures to control current on and off, thereby realizing signal transmission. For high-power applications, semiconductor devices are often required to have the ability to block high voltage and conduct high current at the same time. However, in order to realize these functions, it is necessary to effectively reduce the on-resistance of the semiconductor material, and to effectively isolate the termination...

AI Technical Summary

Problems solved by technology

[0007] In order to solve the problem in the prior art that the control edge of the insulating gate needs to bear stress, and the whole device will lose its function when there is a problem with the unit, the present invention provides a semiconductor device unit and its manufacturing method and forming device. Invention Reduces Stress on IG Control Edges and Facilitates Isolation of Problem Cells

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