Outer conductor electrode structure of homogenized planar photoconductive switch electric field, photoconductive switch device and method

Abstract

The invention discloses an outer conductor electrode structure of a homogenized planar photoconductive switch electric field, a photoconductive switch device and a method, and belongs to the technicalfield of pulse power. The outer conductor electrode structure is composed of a metal cube block material, and the surface of the metal cube block material is plated with at least one metal plating layer. Moreover, the upper side edge and the lower side edge of the outer conductor electrode structure form a chamfer structure, electric field intensity of the electrode edge of the device is effectively reduced, a voltage endurance capability of the device is remarkably improved and a damage to the electrode edge is inhibited, reliability of the device during operation is improved, and the service life of the device is prolonged. And meanwhile, an outer conductor can quickly transfer heat generated at the edge of the electrode when the device continuously works by virtue of good thermal conductivity of the outer conductor so that thermal damage is avoided.

Description

technical field [0001] The invention belongs to the technical field of pulse power, and in particular relates to an outer conductor electrode structure for homogenizing the electric field of a planar photoconductive switch, a photoconductive switch device and a method. Background technique [0002] With the development of pulse power technology, high-power semiconductor devices represented by solid-state switches are gradually replacing traditional devices such as gas switches, vacuum switches, and plasma switches due to their characteristics and advantages of high energy efficiency, high repetition frequency, and miniaturization. . However, as power increases, higher requirements are placed on the reliability and lifetime of high-power semiconductor devices. Under higher operating voltage and operating current, power semiconductor devices often need to withstand high electric fields, which are prone to flashover or breakdown along the surface, which seriously affects the n...

AI Technical Summary

Problems solved by technology

Under higher operating voltage and operating current, power semiconductor devices often need to withstand high electric fields, which are prone to flashover or breakdown along the surface, which seriously affects the normal operation of the device, and even completely fails the device

For planar photoconductive switches, the electric field inside the device exhibits non-uniform distribution characteristics under high bias voltage, especially at the edge of the electrode, which has a very high electric field distribution, which is more than 2 orders of magnitude higher than the theoretical average electric field inside the device. , which makes the device very easy to accumulate damage on the edge of the electrode during the working process, which seriously limits the life of the device under pulse bias voltage, and corona discharge is prone to occur under DC bias voltage, which seriously reduces the withstand voltage capability of the device

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