Novel IGBT power semiconductor device

Abstract

The invention discloses a novel IGBT power semiconductor device. The novel IGBT power semiconductor device comprises a substrate; a buffer region which is arranged on the substrate; a base region which is arranged on the buffer region; and a plurality of true gate units which are arranged on the base region, wherein the two sides of each true gate unit are each provided with a false groove unit, and the contact hole of each true gate unit is connected with the contact holes of the false groove units on the two adjacent sides. According to the invention, the width of the source region can be increased, the process consistency is improved, and the consistency and uniformity of the threshold voltage and other characteristics of the device in a wafer are improved, so that the problem of manufacturability of the device is solved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a novel IGBT power semiconductor device. Background technique [0002] With the upgrading of technology, IGBT has completed many changes. For example, the back of the IGBT has transitioned from a thick-sheet PT type to a thin-sheet NPT, and then upgraded to an ultra-thin FS field termination; Grooved type, then upgraded from figure 1 The microgroove structure shown. However, as the unit cell size of the trench structure shrinks to less than 2um and the current density per unit area increases significantly, its short circuit and RBSOA capabilities become weaker. [0003] To solve the above problems, it was proposed to use figure 2 The pseudo-trench structure shown, even the image 3 The structure of the mixed dummy trench and dummy gate is used to replace part of the real gate to reduce the effective channel, improve short circuit and RBSOA capability, but due to the s...

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Problems solved by technology

However, as the unit cell size of the trench structure shrinks to less than 2um and the current density per unit area increases significantly, its short circuit and RBSOA capabilities become weaker.

[0003] To solve the above problems, it was proposed to use figure 2 The pseudo-trench structure shown, even the image 3 The structure of the mixed dummy trench and dummy gate is used to replace part of the real gate to reduce the effective channel, improve short circuit and RBSOA capability, but due to the small size of the unit cell, its contact hole and gate trench The distance is also very small, generally less than 0.5um, coupled with the drift of the alignment of the hole photolithography process and the loading effect of the etching process, which can further lead to poor consistency and uniformity of the device, which poses a problem to the manufacturability of the device. challenge

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