Pinhole structure for mems probe laser etching device

Abstract

The pinhole structure of the present invention is oriented to the MEMS probe laser etching device and belongs to the technical field of semiconductor processing and testing; the pinhole structure includes a spiral through groove plate and a straight through groove plate; The bottom plate and the first side with a circular cross-section, the outer surface of the side is provided with teeth to form a gear structure; the straight-line slot plate includes a second bottom plate with a straight-line slot and a second side with a circular cross-section side, the upper surface of the second base plate is in close contact with the lower surface of the first base plate; the upper surface of the single crystal silicon wafer and the second base plate are respectively located on the image plane and the object plane of the objective lens, and the single crystal silicon wafer can complete the four-dimensional Motion, including three-dimensional translation and one-dimensional rotation; the pinhole structure of the present invention is oriented to the MEMS probe laser etching device, used in the MEMS probe laser etching device and method disclosed in the present invention, not only the etching accuracy is higher , and the etching pitch can be adjusted continuously.

Description

technical field [0001] The invention relates to a pinhole structure for a MEMS probe laser etching device, which belongs to the technical field of semiconductor processing and testing. Background technique [0002] The probe card is a test interface used to test the bare core. By directly contacting the probes on the probe card with the pads or bumps on the IC chip, the IC chip signal is drawn out, and then cooperates with the test instrument to write to the IC chip. Input the test signal, and then realize the test before IC chip packaging. [0003] One of the core structures of the probe card is the probe. At present, there are two methods of making probes: bottom-up and top-down. [0004] Bottom-up plating method: [0005] CN201010000429.2, a microprobe structure and its manufacturing method, using the lithography, electroplating, planarization and etching technologies of the semiconductor manufacturing process, and replacing the electroplating second sacrificial layer ...

AI Technical Summary

Problems solved by technology

However, in order to realize the preparation of smaller-sized probes and ensure higher etching precision in this process, the cost of process equipment used will increase exponentially. Therefore, the production cost of small-sized high-precision probes is extremely high

[0011] In response to the above problems, a probe preparation process based on laser etching method has emerged. This preparation process can effectively solve the environmental protection problems of the bottom-up electroplating method and the top-down photolithography method. high cost problem

[0012] As the size of the probes becomes smaller and smaller, the precision of laser etching is required to be higher and higher. At the same time, with the continuous emergence of the demand for special probe cards, the structure of the corresponding probes becomes more and more complex. The corresponding laser ablation pattern It also becomes irregular, which brings more and more challenges to the etching. In order to adapt to this change, a laser etching device with high precision and continuous adjustment of the spacing is urgently needed. However, through the existing data With the understanding of equipment and equipment, a general-purpose laser etching equipment, method and key technology that can realize the above functions have not been found.

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