A temperature control method and device for an immersion photolithography machine

Abstract

The invention provides a method and device for controlling the temperature of an immersion photolithography machine, including: exchanging heat between the PCW and the UPW of the photolithography machine through a heat exchanger, and heating the UPW with a heater to raise the temperature of the UPW, and the temperature of the UPW When performing coarse adjustment, based on the detected three temperature values ​​and the UPW temperature control target, the trajectory of the UPW temperature, the flow control model of the PCW and the power control model of the heater are determined; the flow control model of the PCW and the heater are adaptively corrected by fuzzy rules The power control model; the coarsely adjusted UPW passes through the remote transmission pipeline, and is passed into the lithography machine. After being regulated by the semiconductor cooling chip, it is divided into two UPW injection liquids, and the two UPW injection liquids are heated by two heaters. ; When the UPW temperature is finely adjusted, the adjustment amount of the cooling plate is determined by the power of the two UPW liquid injections and the two heaters, the two UPW liquid injection flow rates and the temperature setting values ​​of the two UPW liquid injections. The invention improves the temperature control precision of the lithography machine.

Description

Technical field [0001] The present invention belongs to the temperature control of the immersion photolithography, and more particularly to a temperature control method and apparatus for immersion photolithography. Background technique [0002] The immersion photolithography is soaked that the immersion liquid is soaked between the last projecting objective and the silicon wafer. According to the Rayleigh criteria The temperature change of the immersion liquid will directly cause a variation of the refractive index and viscosity of the immersion liquid, resulting in an exposure focal plane offset, causing a variation of the numerical aperture Na value, which in turn makes the photolithography resolution reduction and the focus reduction; On the one hand, the temperature change of the immersion liquid will result in a temperature change of the silicon wafer and projection objective, causing optical imaging aberration, and will eventually further reduce the resolution of the immer...

AI Technical Summary

Problems solved by technology

[0005] In view of the defects of the prior art, the purpose of the present invention is to provide a temperature control method and device for an immersion lithography machine, aiming at solving the problem of the lack of secondary temperature control of the terminal immersion liquid in the existing lithography machine temperature control method and device. ability, lack of flexibility in temperature control, high requirements for temperature control parameters measurement, and long time for setting

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