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Method, device and equipment for detecting crystal line growth state of silicon rod

A technology of growth state and detection method, which is applied in the direction of measuring devices, testing semiconductor impurities, image enhancement, etc., can solve the problem of low precision in the process of detecting crystal lines, fluctuations in the diameter of single crystal silicon rods, and difficulty in accurately determining the characteristic pixel values ​​​​of crystal lines and crystal line plane height X to achieve the effect of improving detection accuracy and detection efficiency and simple operation

Active Publication Date: 2022-03-11
LONGI GREEN ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in the current scheme, during the actual growth process, the diameter of the single crystal silicon rod will fluctuate, and the crystal line features on the surface of the single crystal silicon rod are not obvious, making it difficult to accurately determine the pixel value of the crystal line feature and the grain size. Line plane height X, which makes the process of detecting crystal lines less accurate

Method used

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  • Method, device and equipment for detecting crystal line growth state of silicon rod
  • Method, device and equipment for detecting crystal line growth state of silicon rod
  • Method, device and equipment for detecting crystal line growth state of silicon rod

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Embodiment 1

[0070] refer to figure 1 , figure 1 A flow chart of the steps of a method for detecting the growth state of a silicon rod crystal line in Embodiment 1 of the present invention is shown. The method may include the steps of:

[0071] Step 101 , acquiring a sample image of the silicon rod while the silicon rod is growing in equal diameter.

[0072] refer to figure 2 , shows a schematic diagram of a silicon rod preparation device in Embodiment 1 of the present invention.

[0073] In the embodiment of the present invention, when using the Czochralski method to prepare single crystal silicon, the single crystal furnace 104 is used to melt high-purity polycrystalline silicon material in the quartz crucible 102, and the lower end of the single crystal seed crystal is immersed in the quartz crucible The liquid surface of the molten silicon 103, and the lower end of the single crystal seed crystal are sequentially subjected to the seeding, shouldering, shoulder turning, equal-diame...

Embodiment 2

[0099] see Figure 5 , shows a flow chart of the steps of a method for detecting the state of crystal line growth of a silicon rod in Embodiment 2 of the present invention, and the method may include the following steps:

[0100] Step 201 , acquiring a sample image of the silicon rod when the silicon rod is growing in equal diameter.

[0101] For this step, reference may be made to the above-mentioned step 101 for details, which will not be repeated here.

[0102] Step 202: Perform image enhancement processing on the sample image according to a preset image enhancement algorithm.

[0103] In this step, image enhancement can be performed on the sample image of the silicon rod to enhance the characteristics of the crystal lines in the sample image, and expand the difference between the crystal lines and other regions in the sample image, which is beneficial to improve the follow-up according to the sample image. The gray value curve corresponding to the detection area determines...

Embodiment 3

[0175] refer to Figure 14 , which shows a structural block diagram of a silicon rod crystal line growth state detection device in Embodiment 3 of the present invention, which may specifically include:

[0176] The sample image acquisition module 301 is configured to acquire a sample image of the silicon rod when the silicon rod is growing in equal diameter.

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Abstract

The present invention provides a method, device and equipment for detecting the crystal line growth state of a silicon rod, which relate to the technical field of single crystal silicon, including: obtaining a sample image of a silicon rod during the growth process of a silicon rod; A detection area is set on the image, and the detection area overlaps with the crystal line growth line of the silicon rod; a gray value curve of the detection area is generated; according to the gray value curve of the detection area, the crystal line of the silicon rod on the crystal line growth line is determined growth status. In the present invention, by collecting the sample image of the silicon rod in the growth process in real time, and setting a detection area on the sample image, according to the gray value curve of the detection area, the growth state of the crystal wire of the silicon rod can be determined, thereby Judging whether the silicon rod is a single crystal silicon rod, this method reduces the influence of the fluctuation of the diameter of the silicon rod and the unobvious characteristics of the crystal wire on the detection process of the crystal wire, thereby improving the detection accuracy and efficiency of the crystal wire, and the operation Simple.

Description

technical field [0001] The invention relates to the technical field of single crystal silicon, in particular to a method, device and equipment for detecting the crystal line growth state of a silicon rod. Background technique [0002] In the process of preparing single crystal silicon by the Czochralski method, there are four crystal lines distributed at equal intervals on the surface of the single crystal silicon rod along the axial direction. If dislocation or thermal stress occurs in the single crystal silicon rod, it will cause crystal When switching from single crystal growth to polycrystalline growth, the crystal line on the surface of the single crystal silicon rod is broken. Therefore, whether there are 4 continuous crystal lines on the silicon rod can be used to judge whether the crystal rod is single crystal silicon or polycrystalline silicon. [0003] The existing method for automatically detecting crystal lines is to take real-time pictures of growing silicon rod...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/84G06T7/00
CPCG01N21/84G06T7/0004G01N2021/8461G06T2207/30148
Inventor 郭力李侨徐战军
Owner LONGI GREEN ENERGY TECH CO LTD
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