Semiconductor device and manufacturing method thereof

Abstract

The invention discloses a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a semiconductor structure, a transition channel structure array and a virtual channel structure array, wherein the transition channel structure array and the virtual channel structure array are arranged in the semiconductor structure and are adjacently arranged in a first direction; the transition channel structure array comprises an edge transition channel structure column adjacent to the virtual channel structure array, the edge transition channel structure column comprises aplurality of edge transition channel structures arranged at intervals in the second direction, and the second direction is perpendicular to the first direction; the virtual channel structure array comprises an edge virtual channel structure column adjacent to the edge transition channel structure column, and the edge virtual channel structure column comprises a plurality of edge virtual channel structures arranged at intervals in the second direction; the shortest distance connecting line direction between any edge virtual channel structure and the adjacent edge transition channel structure deviates from the first direction. The problem of sharp corners of the edge virtual channel holes can be avoided, and therefore electric leakage of the three-dimensional storage device is avoided.

Description

technical field [0001] The present application relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] In the fabrication process of a three-dimensional memory, in addition to designing device channel holes, transition channel holes and dummy channel holes are often designed to achieve related functions, such as providing structural support during the subsequent silicon nitride removal process. The virtual channel hole is usually designed to be circular, but in the process of making the virtual channel hole, it is easy to have a sharp corner problem. When filling the virtual channel hole later, the sharp corner may be insufficiently filled and produce Larger gaps will cause the upper and lower gate layers to be connected when the gate layer is subsequently filled with tungsten, which will cause leakage of the three-dimensional memory device and affect the normal use of the thr...

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Problems solved by technology

Virtual channel holes are usually designed to be circular, but in the process of making virtual channel holes, sharp corners are prone to occur. When filling virtual channel holes later, the sharp corners may be insufficiently filled and produce Larger gaps lead to the subsequent filling of tungsten to form the gate layer, the upper and lower gate layers are connected, resulting in leakage of three-dimensional memory devices, affecting the normal use of three-dimensional memory devices

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