Preparation process of low-iron 4N gallium

Abstract

The invention discloses a preparation process of low-iron 4N gallium. The preparation process comprises the following steps: step 1, adding a gallium-containing solution stock solution to an electrolytic cell; step 2, electrolyzing the gallium-containing solution stock solution for 5 hours at the current density of 0.137A/cm<2>, and separating high-iron metal gallium out of the electrolytic cell;and taking out the high-iron metal gallium in the electrolytic cell, and using the residual solution in the electrolytic cell as a low-iron gallium preparation solution; step 3, electrolyzing the low-iron gallium preparation solution prepared in the step 2 at the current density of 0.119A/cm<2>, controlling the electrolysis time of the low-iron gallium preparation solution within 20 hours, separating out the low-iron metal gallium from the electrolytic cell, and taking out the low-iron metal gallium for later use; and step 4, feeding the low-iron metal gallium prepared in the step 3 into a crystallization tank of which the temperature is lower than the melting point of gallium, and conducting crystallizing to prepare the low-iron crystal gallium. By means of the preparation process, the content of Fe in the 4N gallium product can be reduced, it is guaranteed that the 4N gallium product can meet the quality standard for preparing high-purity gallium, and the yield of high-purity galliumis increased.

Description

Technical field[0001]The invention relates to the technical field of metal preparation, in particular to a preparation process of low-iron 4N gallium.Background technique[0002]Electrolysis is an important part of the gallium production process and determines the quality of gallium metal products. In the quality standard of 4N gallium products, the Fe content is less than 50PPM to meet the standard, but 4N gallium is used to further produce high-purity gallium (7N gallium), and the Fe content in 4N gallium products must be less than 100PPB, otherwise it cannot be produced. Take high purity gallium. At present, in the electrolytic production process of gallium metal, the current is controlled at200A (current density is 0.119A / cm2), due to the variety and complexity of impurities in the electrolyte, the Fe content in the 4N gallium product is increased, which cannot meet the quality standard for preparing high-purity gallium.Summary of the invention[0003]In order to solve the shortcomi...

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Problems solved by technology

In the quality standard of 4N gallium products, the content of Fe is less than 50PPM to meet the standard, but to further produce high-purity gallium (7N gallium) with 4N gallium, the content of Fe in 4N gallium products must be less than 100PPB, otherwise it cannot be produced high purity gallium

At present, in the electrolytic production process of metal gallium, the current is controlled at 200A (the current density is 0.119A / cm2), because there are many kinds of impurities in the electrolyte, and It is more complicated, resulting in the increase of Fe content in 4N gallium products, which cannot meet the quality standards for the preparation of high-purity gallium

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