Preparation method of silicon monoxide composite negative electrode material and product thereof
A silicon oxide, negative electrode material technology, applied in the direction of negative electrode, battery electrode, active material electrode, etc., can solve the problems of Li loss of activity, affecting practical application, low first charge and discharge efficiency, etc., to avoid falling off and pulverization, The effect of improving coulombic efficiency
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Embodiment 1
[0064] Weigh the high-purity silicon element and high-purity silicon dioxide according to the molar ratio of 1:1, sand-mill in absolute ethanol at a speed of 2400r / min for 2 hours, dry at 90°C to remove ethanol, and sieve to obtain a uniform texture High-purity silicon simple substance and high-purity silica mixture precursor. Put the mixture precursor in a high-temperature tube furnace, under the protection of inert gas, fill the cavity with inert protective gas, keep the normal pressure of the pressure gauge constant, raise the temperature at a rate of 5 °C / min, raise the temperature to 1400 °C, and keep for 8 hours. After the reaction is complete, silicon oxide is generated, and then the temperature is raised to 1600°C at a rate of 5°C / min, the inert gas valve switch is turned on, the gas flow rate is controlled at 60L / h, and the mixed gas of inert gas and silicon oxide is delivered to the initial temperature In a chemical vapor deposition furnace with a temperature of 1500...
Embodiment 2
[0068] The high-purity silicon and high-purity silicon dioxide are weighed according to the molar ratio of 2:1, sand-milled in absolute ethanol at a speed of 2200r / min for 2 hours, dried at 90°C to remove ethanol, and sieved to obtain the texture Uniform high-purity silicon simple substance and high-purity silica mixture precursor. Put the mixture precursor in a high-temperature tube furnace, under the protection of inert gas, fill the cavity with inert protective gas, keep the normal pressure of the pressure gauge constant, raise the temperature at a rate of 10 °C / min, and raise the temperature to 1300 °C for 4 hours. After the reaction is complete, silicon oxide is generated, then the temperature is raised to 1600 °C at a rate of 5 °C / min, the gas valve is turned on, the gas flow rate is 60 L / h, and the mixed gas of inert gas and silicon oxide is transported to an initial temperature of 1350 °C , In a chemical vapor deposition furnace in a vacuum state, the porous graphite p...
Embodiment 3
[0070] The high-purity silicon and high-purity silicon dioxide are weighed according to the molar ratio of 2:1, sand-milled in absolute ethanol at a speed of 2200r / min for 2 hours, dried at 90°C to remove ethanol, and sieved to obtain the texture Uniform high-purity silicon simple substance and high-purity silica mixture precursor. Put the mixture precursor in a high-temperature tube furnace, under the protection of inert gas, fill the cavity with inert protective gas, keep the normal pressure of the pressure gauge constant, raise the temperature at a rate of 10 °C / min, and raise the temperature to 1300 °C for 4 hours. After the reaction is complete, silicon oxide is generated, then the temperature is raised to 1600 °C at a rate of 5 °C / min, the gas valve is turned on, the gas flow rate is 60 L / h, and the mixed gas of inert gas and silicon oxide is transported to an initial temperature of 1200 °C , In a chemical vapor deposition furnace in a vacuum state, with the porous graph...
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