Connecting material for connecting silicon carbide ceramics and application method thereof
A technology of silicon carbide ceramics and connecting materials, which is applied in the field of silicon carbide ceramic materials, can solve the problems of affecting the mechanical strength performance of silicon carbide ceramic materials, the difficulty of industrial production, and the high requirements for external heat sources, so as to achieve the benefit of metallurgical reactions and the difficulty of industrial production Small, the effect of increasing the surface energy of the interface
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Embodiment 1
[0029] Such as figure 1 The silicon carbide ceramic material to be connected is connected by a connecting layer as shown, and the silicon carbide ceramic material to be connected is two cylindrical pure silicon carbide ceramic materials with a diameter and a height of 20 mm; the connecting layer is a CoFeCrNiCu high-entropy alloy sheet, and The thickness of the CoFeCrNiCu high-entropy alloy sheet is 100 μm, and the material used for the connection layer is a CoFeCrNiCu high-entropy alloy. The preparation method of the material is as follows: a high-entropy alloy with a single FCC structure can be obtained by preparing a CoFeCrNiCu quinary alloy according to an equiatomic ratio to form CoFeCrNiCu High entropy alloys.
[0030] An external heat source heating connection method is used to connect the silicon carbide materials to be connected together through the connection layer, and the external heat source heating connection method is electric field assisted thermocompression co...
Embodiment 2
[0037] The difference between this embodiment and embodiment 1 is:
[0038]The silicon carbide ceramic material to be connected is two composite materials based on pure silicon carbide ceramic material, specifically carbon fiber reinforced silicon carbide composite material; the connecting layer is CoFeCrNiCuTi 0.5 High-entropy alloy flakes, and CoFeCrNiCuTi 0.5 The thickness of the high-entropy alloy sheet is 400 μm, and the material used for the connection layer is CoFeCrNiCuTi 0.5 High-entropy alloy, the preparation method of this material is: first prepare the CoFeCrNiCu quinary alloy according to the equiatomic ratio to obtain a high-entropy alloy with a single FCC structure, and then add Ti element to form CoFeCrNiCuTi 0.5 High entropy alloys.
[0039] In step (5), the temperature is raised to a furnace temperature of 1075° C. (that is, the connection temperature is 1075° C.).
[0040] Others are with embodiment 1.
Embodiment 3
[0042] The difference between this embodiment and embodiment 1 is:
[0043] The silicon carbide ceramic material to be connected is two composite materials with pure silicon carbide ceramic material as the matrix, specifically silicon carbide fiber reinforced silicon carbide composite material; the connecting layer is a CoFeCrNiCuTi high-entropy alloy sheet, and the thickness of the CoFeCrNiCuTi high-entropy alloy sheet is 300 μm , the material used in the connection layer is a CoFeCrNiCuTi high-entropy alloy. The preparation method of this material is: first prepare the CoFeCrNiCu quinary alloy according to the equiatomic ratio to obtain a high-entropy alloy with a single FCC structure, and then add Ti element to form a CoFeCrNiCuTi high-entropy alloy .
[0044] In step (5), the temperature is raised to a furnace temperature of 1100° C. (that is, the connection temperature is 1100° C.).
[0045] Others are with embodiment 1.
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