A gan device hardened against single event radiation

Abstract

The invention discloses a GaN device resistant to single-event radiation hardening, which comprises a substrate, a buffer layer, a channel layer, a barrier layer, and a passivation layer sequentially stacked from bottom to top; the GaN device resistant to single-event radiation hardening The two ends are respectively provided with source and drain; the source and drain penetrate through the barrier layer and passivation layer; there is a groove between the source and drain, and the groove penetrates through the barrier layer and passivation layer; the groove There is a gate inside, and a gate dielectric layer is set between the gate and the inner wall of the trench; the top of the gate and the drain are respectively connected with a gate field plate and a drain field plate; there is also a buried N well on the barrier layer, and the buried N The thickness of the well is the same as that of the barrier layer, and there is a gap between the buried N well and the trench; the top of the buried N well is connected to a Schottky electrode, and the Schottky electrode has the same width as the buried N well and is set up and down correspondingly. There is a Schottky electrode field plate on top of the electrode. The invention can prevent devices from being burned under low drain bias voltage, and effectively improves the threshold voltage of single event burning of GaN devices.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a single-event radiation-resistant GaN device. Background technique [0002] GaN, a wide bandgap semiconductor material, has natural advantages in anti-irradiation applications. Due to the polarization effect, GaN can form a two-dimensional electron gas (2DEG, Two-dimensional electron gas), so that GaN devices can obtain extremely low on-resistance, and because GaN materials have extremely high critical breakdown electric field strength, the breakdown voltage of GaN devices is also higher than other semiconductor materials. Because of its high power, high frequency and other characteristics, GaN has become one of the most potential power electronic devices. [0003] As the application fields of GaN devices become wider and wider, the research on GaN in the field of radiation resistance is also gradually in-depth. Many research institutions at home and abroad have conduct...

AI Technical Summary

Problems solved by technology

However, the existing GaN power devices suffer from the problem that the single event burnout threshold voltage is too low

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