Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ion source mounting structure and ion source device

An installation structure and technology of ion source, applied in the field of ion source, can solve the problems of low use efficiency, poor ion source coverage effect, etc.

Pending Publication Date: 2020-10-27
ZHONGSHAN IBD TECH CO LTD +1
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of this application is to solve one of the above-mentioned technical defects, especially the defects of poor ion source coverage and low use efficiency, and provide an ion source installation structure and ion source device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ion source mounting structure and ion source device
  • Ion source mounting structure and ion source device
  • Ion source mounting structure and ion source device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] Embodiments of the present application are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present application, and are not construed as limiting the present application.

[0040] Those skilled in the art will understand that unless otherwise stated, the singular forms "a", "an", "said" and "the" used herein may also include plural forms. It should be further understood that the wording "comprising" used in the description of the present application refers to the existence of the stated features, integers, steps, and operations, but does not exclude the existence or addition of one or more other features, integers, steps, and operations.

[0041] refer to figure 1 as shown, figure 1 It is a structural schem...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an ion source mounting structure and an ion source device, which are applied to the ion source device, and the ion source device comprises at least one Hall ion source and atleast one hollow cathode; the hollow cathode is arranged at a set position away from the Hall ion source and provides neutralizing electrons for the Hall ion source; the mounting structure comprises an ion source base, an angle adjusting mechanism and a base, wherein the Hall ion source is installed on the ion source base, the ion source base is installed on the base through the angle adjusting mechanism, and the ion source base rotates through the angle adjusting mechanism so as to adjust the emission angle of the Hall ion source. According to the technical scheme, the angle of the Hall ion source can be adjusted according to the film coating requirement, so that the ion source coverage effect can be improved, and the use efficiency is improved.

Description

technical field [0001] The present application relates to the technical field of ion sources, in particular to an ion source installation structure and an ion source device. Background technique [0002] Ion ion source is an applied science and technology with wide application, many types, many sciences involved, strong process technology and very rapid development. As a very commonly used ion source type, the Hall ion source is mostly used in the field of thin film deposition as a deposition auxiliary component to improve the physical properties of thin films. [0003] The ion source device is used for coating in a vacuum coating machine, but during the coating process, different coating objects require different coverage and different density ion beams to obtain better results. At present, the ion source device is generally installed in a vacuum coating machine, and it cannot be adjusted for different coating objects, resulting in poor coverage of the ion source and low e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01J27/02H01J27/14
CPCH01J27/022H01J27/146
Inventor 刘伟基吴秋生冀鸣易洪波赵刚
Owner ZHONGSHAN IBD TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com