Three-dimensional capacitor inductor based on high-functional-density silicon through hole structure and preparation method

Abstract

The invention belongs to the technical field of semiconductor devices, and particularly relates to a three-dimensional capacitor inductor based on a high-functional-density silicon through hole structure and a preparation method. The three-dimensional capacitor inductor comprises a substrate, provided with a silicon through hole; a three-dimensional capacitor, formed on the side wall of the silicon through hole and sequentially comprising a first metal layer, a second insulating layer and a second metal layer; a three-dimensional inductor, formed by rewiring central filling metal and planar thick metal of the silicon through hole. A first insulating layer is arranged between the side wall of the silicon through hole and the three-dimensional capacitor, and a third insulating layer is arranged between the three-dimensional capacitor and the three-dimensional inductor. Values of capacitance and inductance in an integrated system can be effectively increased, capacitance and inductance can be integrated near a chip in three-dimensional integration, the functional density of through silicon vias in three-dimensional integration can be improved, and the utilization rate of silicon in system integration is increased. Compared with discrete capacitors and inductors on other organic substrates, the integration level is greatly improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a three-dimensional capacitive inductor based on a high functional density through-silicon hole structure and a preparation method thereof. Background technique [0002] With the increasing integration of integrated circuits, the feature size of devices has approached the physical limit. In order to further improve performance and integration, researchers began to continuously increase the utilization rate of silicon, that is, the functional density. Among them, the system integration of the chip in the three-dimensional direction can greatly improve the functional density of the chip, but as the chip density increases in the system integration, the signal coupling becomes extremely serious, and more and more decoupling capacitors and inductors are required. . Only relying on the capacitance and inductance on the PCB board cannot meet the requirements ...

AI Technical Summary

Problems solved by technology

These structural TSVs occupy a large area of ​​silicon and have a single function

Therefore, the functional density of TSV is very low and the utilization of silicon is very low

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