Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Structure and method for semiconductor device

A semiconductor and device technology, applied in the field of designing semiconductor devices and their formation, can solve problems such as no joint area

Pending Publication Date: 2020-07-14
TAIWAN SEMICON MFG CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This can be problematic especially for FETs with many gate vias because there may not be enough bonding area on the semiconductor device outside the active area

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Structure and method for semiconductor device
  • Structure and method for semiconductor device
  • Structure and method for semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which the first component and the second component are formed in direct contact. An embodiment in which an additional component is formed between such that the first component and the second component may not be in direct contact. In addition, the present invention may repeat reference numerals and / or characters in various instances. This repetition is for simplicity and clarity and does not in itself ind...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Provided is a semiconductor device and methods of forming the same. The semiconductor device includes a substrate having source / drain regions and a channel region between the source / drain regions; a gate structure over the substrate and adjacent to the channel region; source / drain contacts over the source / drain regions and electrically connecting to the source / drain regions; and a contact protection layer over the source / drain contacts. The gate structure includes a gate stack and a spacer. A top surface of the source / drain contacts is lower than a top surface of the spacer, which is substantially co-planar with a top surface of the contact protection layer. The contact protection layer prevents accidental shorts between the gate stack and the source / drain regions when gate vias are formedover the gate stack. Therefore, gate vias may be formed over any portion of the gate stack, even in areas that overlap the channel region from a top view.

Description

[0001] This application is a divisional application of the invention patent application entitled "Structure and Method for Semiconductor Devices" with application number 201410507439.3 filed on September 28, 2014. technical field [0002] The present invention relates generally to the field of semiconductor technology, and more particularly, to designing semiconductor devices and methods of forming them. Background technique [0003] The semiconductor integrated circuit (IC) industry has experienced exponential growth. Technological advances in IC materials and design have produced successive generations of ICs, where each generation has smaller and more complex circuits than the previous generation. During the evolution of ICs, functional density (ie, the number of interconnected devices per unit chip area) typically increases while geometry size (ie, the smallest component (or line) that can be made using a fabrication process) decreases. This scaling down process provide...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L21/8234H01L23/522H01L23/528H01L23/532H01L23/535H01L27/088H01L29/40H01L29/423H01L29/45H01L21/336
CPCH01L29/665H01L21/823418H01L21/823437H01L21/823475H01L2924/0002H01L21/76897H01L21/76829H01L21/76895H01L29/66583H01L21/76831H01L29/401H01L2924/00H01L21/76879H01L23/535H01L21/76819H01L23/48H01L21/768H01L23/5226H01L23/5283H01L23/5329H01L27/088H01L29/42364H01L29/456
Inventor 陈志良赖志明萧锦涛刘如淦沈孟弘刘俊宏宋淑惠杨超源
Owner TAIWAN SEMICON MFG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products