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Flexible strain sensor based on MXene material and preparation and application thereof

A strain sensor and sensor technology, applied in the direction of electric/magnetic solid deformation measurement, electromagnetic measurement device, etc., can solve the problems of lack of packaging layer in sensor structure design, great influence on sensor performance, and affect sensing performance, etc., to achieve human Machine interaction function, simple preparation method, and the effect of expanding the application field

Active Publication Date: 2020-09-22
DONGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] CN 108168420 A discloses a flexible strain sensor based on MXene material. On the one hand, it uses strong corrosive liquid hydrofluoric acid to prepare sensitive material, which is very dangerous, and the surface of the prepared sensitive material has many defects, which affects Sensing performance; on the other hand, the structural design of the sensor lacks an encapsulation layer, and environmental factors such as humidity have a great influence on the performance of the sensor device, and the designed electrodes are distributed at both ends of the sensitive material, which is not suitable for bending sensors, such as applied to Virtual / augmented reality creative human-machine interface feedback smart gloves, etc., have relatively large limitations in the application fields of intelligent robots and human-computer interaction

Method used

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  • Flexible strain sensor based on MXene material and preparation and application thereof
  • Flexible strain sensor based on MXene material and preparation and application thereof
  • Flexible strain sensor based on MXene material and preparation and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Wet Chemical Etching of Parent Ti 3 AlC 2 -MAX powder, preparation of Ti 3 C 2 -MXene membrane, figure 1is its preparation flow chart, that is, it is prepared by selectively etching away the A atoms in the MAX phase (M represents a transition metal, X represents carbon or nitrogen, and A represents the III or IV main group element). Specific preparation method: place the polytetrafluoroethylene bottle on a magnetic stirrer, first add 12mL concentrated HCl (9M, hydrochloric acid concentration 36%-38%) and 1mL ultrapure water, at a speed of 3500r / min, the temperature is 25- Slowly add 1g LiF (lithium fluoride) at 35°C, stir until dissolved, then slowly add 1g Ti 3 AlC 2 -MAX powder; secondly, keep the temperature at 25-30°C for etching for 24 hours; finally pour it into a centrifuge tube, wash the etching solution by centrifugation at 3500r / min, centrifuge for 5 minutes each time, and repeatedly centrifuge and wash until pH ≥ 6 to obtain Ti 3 C 2 - Colloidal solut...

Embodiment 2

[0048] Wet Chemical Etching of Parent Ti 3 AlC 2 -MAX powder, preparation of Ti 3 C 2 -MXene membrane, figure 1 A flowchart is prepared for it, that is, it is prepared by selectively etching away A atoms in the MAX phase (M represents a transition metal, X represents carbon or nitrogen, and A represents a group III or IV main group element). Specific preparation method: place the polytetrafluoroethylene bottle on a magnetic stirrer, first add 30mL concentrated HCl (9M, hydrochloric acid concentration 36%-38%) and 2mL ultrapure water, at a speed of 3500r / min, the temperature is 25- Slowly add 2g LiF (lithium fluoride) at 30°C, stir until dissolved, then slowly add 2g Ti 3 AlC 2 -MAX powder; secondly, keep the temperature at 25-35°C for etching for 48 hours; finally pour it into a centrifuge tube, wash the etching solution by centrifugation at 3500r / min, centrifuge for 5 minutes each time, and repeatedly centrifuge and wash until pH ≥ 6 to obtain Ti 3 C 2 - Colloidal sol...

Embodiment 3

[0053] Wet Chemical Etching of Parent Ti 3 AlC 2 -MAX powder to prepare flexible fabric sensors, figure 1 is its preparation flow chart, that is, it is prepared by selectively etching away the A atoms in the MAX phase (M represents a transition metal, X represents carbon or nitrogen, and A represents the III or IV main group element). Specific preparation method: place the polytetrafluoroethylene bottle on a magnetic stirrer, first add 12mL concentrated HCl (9M, hydrochloric acid concentration 36%-38%) and 1mL ultrapure water, at a speed of 3500r / min, the temperature is 25- Slowly add 1g LiF (lithium fluoride) at 35°C, stir until dissolved, then slowly add 1g Ti 3 AlC 2 -MAX powder; secondly, keep the temperature at 25-30°C for etching for 24 hours; finally pour it into a centrifuge tube, wash the etching solution by centrifugation at 3500r / min, centrifuge for 5 minutes each time, repeatedly centrifuge and wash until pH ≥ 6, add ultra- After pure water and centrifugation ...

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Abstract

The invention relates to a flexible strain sensor based on an MXene material and preparation and application thereof. The sensor comprises an external packaging layer, and a flexible substrate, a signal output layer, a sensing layer, a signal output layer and a flexible substrate are sequentially arranged inside the external packaging layer. The sensor provided by the invention is applied to a data glove and a real representation form of virtual reality to control a manipulator, so that a man-machine interaction function is realized. The flexible strain sensor is simple in manufacturing process, the designed structure reduces the influence of environmental factors such as humidity on the performance of the sensor and has high cycling stability, the application field is expanded, and the practical process of the flexible strain sensor is accelerated.

Description

technical field [0001] The invention belongs to the field of flexible wearable sensors and their preparation and application, in particular to a flexible strain sensor based on MXene material and its preparation and application. Background technique [0002] With the development of the digital information age, flexible electronic devices have received extensive attention in the field of wearable electronics. Among various wearable electronic devices, flexible strain sensors have become an important research direction for the development of smart materials in the future. , motion monitoring systems, soft robots, prosthetic devices and other fields have broad application prospects. [0003] According to the sensing mechanism of flexible strain sensors, flexible strain sensors can be divided into the following categories: resistive, capacitive, piezoelectric, and transistor-based field-effect sensors. Among them, resistive sensors have aroused great interest of researchers du...

Claims

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Application Information

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IPC IPC(8): G01B7/16
CPCG01B7/18
Inventor 王宏志顾伟侯成义李耀刚张青红
Owner DONGHUA UNIV
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