Atomic layer deposition apparatus and 3D storage device

Abstract

The invention discloses an atomic layer deposition apparatus and a 3D storage device. The atomic layer deposition apparatus comprises an air inlet pipeline used for receiving at least two kinds of reactant gas and inert gas, a reaction chamber connected with the air inlet pipeline, a base located in the reaction chamber and used for bearing a silicon wafer and heating the silicon wafer, and an exhaust channel connected with the reaction chamber, the atomic layer deposition apparatus further comprises an adjustable control board located in the reaction chamber and used for blocking the reactantgas from arriving at the surface of the silicon wafer, according to the atomic layer deposition apparatus, the adjustable control board controls the reactant gas participating in the silicon wafer surface reaction, an adhesive film can carry out layered growth, the adhesive film with the consistent crystal orientation and the crystal boundary superficial area reduced is obtained, and the blockingcapacity of the adhesive film is improved.

Description

Technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an atomic layer deposition equipment and a 3D storage device. Background technique [0002] The improvement of the storage density of the storage device is closely related to the progress of the semiconductor manufacturing process. As the feature size of the semiconductor manufacturing process becomes smaller and smaller, the storage density of the memory device becomes higher and higher. In order to further increase the storage density, storage devices with three-dimensional structures (ie, 3D storage devices) have been developed. The 3D memory device includes a plurality of memory cells stacked in a vertical direction, and the integration degree can be doubled on a wafer of unit area, and the cost can be reduced. [0003] In the manufacturing process of 3D memory devices, for example, an etching method is used to form a cavity in the interlayer insulating layer, ...

AI Technical Summary

Problems solved by technology

In the step of filling the metal material, the metal material is generated by reducing metal fluoride, and the generated fluorine can diffuse into the interlayer insulating layer through the adhesive film, so that the gate conductors at different levels are interconnected, or the channel pillars are interconnected. even, may still result in device failure

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