Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A programmable high-precision dynamic driving gan circuit and its application

A driving circuit, high-precision technology, applied in the direction of high-efficiency power electronic conversion, electronic switches, electrical components, etc., can solve the problem that the driving delay cannot obtain the preset driving waveform, etc., to ensure the driving ability, driving accuracy, and selectivity. many effects

Active Publication Date: 2021-12-03
HUAZHONG UNIV OF SCI & TECH
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention provides a programmable high-precision dynamic driving GaN circuit and its application to solve the technical problem that the existing dynamic driving GaN circuit has a driving delay and cannot obtain a preset driving waveform when driving GaN

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A programmable high-precision dynamic driving gan circuit and its application
  • A programmable high-precision dynamic driving gan circuit and its application
  • A programmable high-precision dynamic driving gan circuit and its application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] A programmable high-precision dynamic driving GaN circuit, such as figure 1 As shown, it includes: a programmable digital module, a driving module and a clock generation module; wherein, the programmable digital module includes an EEPROM readout circuit, a register circuit and a logic control circuit; Coarse drive circuit and fine drive circuit for gate electrical connection;

[0049] The control and driving process of the logic control circuit is divided into a plurality of rough driving time periods. In each rough driving time period, it is possible to choose whether to perform a fine adjustment to change the driving current of this time period, and store the driving data in a programmable manner. In the off-chip programmable EEPROM;

[0050] After power-on, the EEPROM readout circuit is used to read the driving data in the EEPROM and store it in the register circuit, and the external input PWM square wave signal is electrically connected to the input of the logic co...

Embodiment 2

[0078] A dynamic driving method of a GaN power switching device, adopting any of the above-mentioned programmable high-precision dynamic driving GaN circuits to actively drive the GaN power switching device, so as to realize the dynamic driving of the GaN power switching device.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the field of power semiconductor device switches, and specifically relates to a programmable high-precision dynamic driving GaN circuit and its application. The circuit includes a programmable digital module, a clock generation module and a driving module; the programmable digital module includes an EEPROM readout circuit, Register circuit, logic control circuit; drive circuit includes rough drive circuit and fine drive circuit. The turn-on and turn-off times are equally divided into multiple time periods, and each time period is a rough driving cycle; fine-tuning of the fine driving can be performed once in each rough driving cycle to generate pulses to control the driving current of the fine driving circuit. After power-on, the off-chip data is stored in the register through the EEPROM readout circuit, and the oscillator circuit controls the logic circuit to transmit the required data to the drive circuit during the turn-on and turn-off process, and dynamically controls the rough drive circuit and the rough drive circuit of multiple rough drive cycles. Fine drive circuit to realize programmable high-precision active GaN gate control.

Description

technical field [0001] The invention belongs to the field of power semiconductor device switches, and more specifically relates to a programmable high-precision dynamic driving GaN circuit and its application. Background technique [0002] Power electronic devices are widely used in people's daily life, among which power semiconductor devices play a vital role in power electronics. In power semiconductor devices, the performance of MOSFET devices is basically mature and stable. As a new device that is different from MOSFET in material and structure, GaN has smaller device size, lower on-resistance, and smaller The input capacitance; so that GaN has a faster switching speed and lower static loss. [0003] The faster switching speed of GaN brings challenges to its driving. Faster switching speed will lead to more severe ringing phenomenon and larger overshoot, which will not only damage the device, but also may lead to parasitic conduction, resulting in shoot-through Burn ou...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/296H02M1/08
CPCH02M1/08H03K17/296Y02B70/10
Inventor 童乔凌曾婉华张毅严金程
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products