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Variable-gain low-noise amplifier with broadband flat gain

A flat gain, low gain technology, applied in the field of millimeter wave front-end circuits, can solve the problems of low 1dB gain flatness, narrow variable gain low noise amplifier bandwidth, unable to maintain wideband gain bandwidth and 1dB flatness, etc., to achieve flatness Gain response, effect of good noise matching

Pending Publication Date: 2020-07-10
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The variable gain low noise amplifier in the above existing variable gain low noise amplifier scheme has a narrow bandwidth and low 1dB gain flatness, and the wideband gain bandwidth and 1dB flatness cannot be maintained under different gain modes

Method used

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  • Variable-gain low-noise amplifier with broadband flat gain
  • Variable-gain low-noise amplifier with broadband flat gain
  • Variable-gain low-noise amplifier with broadband flat gain

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Embodiment

[0027] A variable-gain low-noise amplifier with wideband flat gain, such as figure 1 As shown, including the first capacitor C1, the second capacitor C2, the third capacitor C3, the fourth capacitor C4, the fifth capacitor C5, the first inductor L1, the second inductor L2, the third inductor L3, the fourth inductor L4, the Five inductors L5, a first bias resistor RB1, a second bias resistor RB2, a first NMOS transistor M1, a second NMOS transistor M2, a first group of switching transistors, a second group of switching transistors, n resistors, and n control voltages , DC bias VB1 and power supply VDD; wherein, the first group of switching transistors and the second group of switching transistors each include n switching transistors;

[0028] The input terminal IN is connected to the negative terminal of the first inductor L1 through the first capacitor C1, and the DC bias VB1 is connected to the negative terminal of the first inductor L1 through the first bias resistor RB1 for...

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Abstract

The invention discloses a variable-gain low-noise amplifier with broadband flat gain. The amplifier comprises a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, a fifth capacitor, a first inductor, a second inductor, a third inductor, a fourth inductor, a fifth inductor, a first bias resistor, a second bias resistor, a first NMOS transistor, a second NMOS transistor, a first group of switching transistors, a second group of switching transistors, n resistors, n control voltages, a DC bias and a power supply, wherein each of the first group of switching transistors and the second group of switching transistors comprises n switching transistors. According to the invention, better compromise between noise matching and broadband input matching is realized by adoptinga transformer through gate drain of the input transistor, and broadband flat gain response is realized by adopting a double-gate inductance peaking technology; and the digital switch controls the voltage flatness gain.

Description

technical field [0001] The invention relates to the field of millimeter-wave front-end circuits of electronic communication technology, in particular to a wide-band flat gain variable-gain low-noise amplifier. Background technique [0002] In recent years, many industry and academic research institutions have turned their research focus to the fifth generation (5G) communication. The millimeter wave front-end circuit is an important part of the 5G communication system. One of the keys is the low noise amplifier. In 5G phased array receiver, variable gain low noise amplifier will be a more attractive choice, when the weak RF signal enters the receiver, the low noise amplifier needs to have the highest gain and minimum noise figure; in another On the other hand, if the incoming RF signal is strong, the LNA provides moderate gain and high linearity to prevent receiver saturation. [0003] Among the realized variable gain low-noise amplifier schemes, (Kim S, Kim H C, Kim D H, ...

Claims

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Application Information

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IPC IPC(8): H03F1/26H03F1/42H03F1/12H03F1/08H03F1/02
CPCH03F1/26H03F1/42H03F1/12H03F1/08H03F1/0205
Inventor 薛泉徐涛涛
Owner SOUTH CHINA UNIV OF TECH
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