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Bidirectional silicon-controlled rectifier and preparation method thereof

A silicon-controlled rectifier, bidirectional technology, used in semiconductor/solid-state device manufacturing, electrical solid-state devices, semiconductor devices, etc., can solve the problem that no hysteresis effect silicon-controlled rectifier cannot be used in negative high-voltage scenarios, and achieve the effect of high trigger voltage

Pending Publication Date: 2020-07-10
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a bidirectional silicon-controlled rectifier and its preparation method, which is used to solve the problem that the silicon-controlled rectifier without hysteresis effect in the prior art cannot be applied to the negative high voltage scene

Method used

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  • Bidirectional silicon-controlled rectifier and preparation method thereof
  • Bidirectional silicon-controlled rectifier and preparation method thereof
  • Bidirectional silicon-controlled rectifier and preparation method thereof

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Embodiment Construction

[0039] The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. The advantages and features of the present invention will be more apparent from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0040] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right" etc. is based on the orientation or positional relationship shown in the drawings , is only for the convenience of describing the present invention and simplifying the description, but does not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orien...

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Abstract

The invention discloses a bidirectional silicon controlled rectifier and a preparation method thereof. Actually, the structure of the cathode of the original unidirectional silicon-controlled rectifier without the hysteresis effect is completely removed, and then the two structures for the original unidirectional silicon-controlled rectifier without the hysteresis effect are connected in a left-and-right symmetric manner; the bidirectional silicon-controlled rectifier provided by the invention is a bidirectional device, and can be simultaneously suitable for the design of an anti-static protection circuit of positive and negative high-voltage IO ports. Besides, the trigger voltage of the hysteresis effect of the bidirectional silicon-controlled rectifier can be adjusted by adjusting the second distance, and compared with a silicon-controlled rectifier without the hysteresis effect in the prior art, the bidirectional silicon-controlled rectifier provided by the invention has higher trigger voltage.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuits, in particular to a bidirectional silicon-controlled rectifier and a preparation method thereof. Background technique [0002] In the field of anti-static protection design of high-voltage integrated circuits, the design scheme of non-hysteretic effect silicon-controlled rectifier multi-stage series-connected anti-static protection circuit applied to high-voltage ports has the advantage of saving layout area and has attracted wide attention. [0003] Prior art Chinese patent CN108183101A discloses a silicon-controlled rectifier type ESD protection structure without hysteresis effect and its implementation method, please refer to figure 1 , including: semiconductor substrate 80; N well 60 and P well 70 formed on the semiconductor substrate; high-concentration P-type doping 20, high-concentration N-type doping 28 placed on the upper part of N well 60, high-concentration P-t...

Claims

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Application Information

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IPC IPC(8): H01L27/02H01L21/8228
CPCH01L27/0262H01L21/8228
Inventor 朱天志黄冠群陈昊瑜邵华
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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