Capacitively coupled plasma processor and temperature adjusting method thereof

Abstract

The invention discloses a capacitively coupled plasma processor and a temperature adjusting method thereof. At least one heater and at least one fan are arranged in a reaction chamber of the capacitively coupled plasma processor; a conductive mounting plate of an upper electrode assembly is internally provided with a cooling pipeline; a cooling liquid flows in the cooling pipeline; when the temperature in the reaction chamber of the capacitively coupled plasma processor is lower than a set temperature, the heater is powered on to heat the upper electrode assembly; when the temperature in the reaction chamber of the capacitively coupled plasma processor is higher than the set temperature, the heater is disconnected, the cooling liquid in the cooling pipeline of the conductive mounting plateis kept in a circulating state; when the capacitively coupled plasma processor is in a process state, the fan is turned on; and when the capacitively coupled plasma processor is in a standby state, the fan is turned off. According to the invention, the cooling pipeline and the fan are used in cooperation, the cooling capacity of the cooling pipeline does not need to be enhanced, the power of theheater does not need to be increased, energy is saved, and the temperature of the reaction chamber is easier to control.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a capacitively coupled plasma processor and a temperature regulating method thereof. Background technique [0002] The capacitively coupled plasma etching process requires the reaction chamber to maintain a constant temperature in both the idle state and the process state, such as figure 1 As shown, the reaction chamber 1 of the capacitively coupled plasma processor is provided with an upper electrode 2' and a lower electrode 3', the lower electrode is connected to a radio frequency source 6', an electrostatic chuck 4' is arranged on the lower electrode 3', and the to-be-processed The substrate 5' is set on the electrostatic chuck 4', and the upper electrode 3' serves as a gas shower head at the same time. The gas shower head is connected to the gas supply device 7', and the gas of the gas supply device 7' enters the reaction through the gas shower head. The chamber 1'...

AI Technical Summary

Problems solved by technology

However, when the capacitively coupled plasma etching equipment changes from the standby state to the process state, the temperature of the upper electrode 2' will soar instantaneously due to the influence of the plasma, exceeding the process requirements or exceeding the temperature of the parts, thereby affecting the performance of the machine. And product yield rate, at this time, if want to lower the temperature of the electrode plate, just need to strengthen the cooling capacity of cooling pipe 10', if the cooling capacity of cooling pipe 10' becomes very strong, the heater will 8' requires high power to reach the set temperature, and most of the heating energy is taken away by the cooling circulating water, resulting in a waste of energy

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