Method for manufacturing one-time programmable device and one-time programmable device

Abstract

The invention provides a method for manufacturing a one-time programmable device and the one-time programmable device. The device comprises an active region, a shallow trench isolation structure located on one side of the active region, a first silicon oxide layer located on the active region, a gate structure located on the shallow trench isolation structure and the first silicon oxide layer, side walls located on two sides of the gate structure, a refractory silicide layer, a second silicon nitride layer, and a contact hole, wherein the refractory silicide layer and the second silicon nitride layer are sequentially located on the gate structure, and the contact hole is connected with the refractory silicide layer. A surface of the shallow trench isolation structure is higher than the surface of the first silicon oxide. A cathode end is placed in a shallow trench isolation structure region, an anode end is placed in the active region, the shallow trench isolation structure region andthe active region form a step, the refractory silicide layer also forms the step, and a grain size of the refractory silicide at the step is different from that at a plane so that migration of metal ions at the cathode end is facilitated, the migrated metal ions are not easy to return to the cathode end again, and reliability is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a manufacturing method of a one-time programmable device and a one-time programmable device. Background technique [0002] Compared with general-purpose and single memory, the embedded memory unit can enhance the performance of the memory, and can also reduce the area of ​​the chip. Embedded non-volatile memory is widely used in programming codes of consumer electronics, industry and automotive electronics, etc., and is widely used because the technology of the embedded memory unit is compatible with the existing technology. One type of embedded memory unit is a one-time programmable unit based on refractory silicide. Due to its good compatibility with existing processes and simple operation, it has been widely used, from 65nm logic process and 40nm logic process to 28nm The logic process is in use, and the basic structure diagram is as follows figure 1 , on the shallow ...

AI Technical Summary

Problems solved by technology

However, after the cell programming of this structure, the metal ions migrated in the high temperature process are easy to return

For one-time programmable cells based on refractory silicide, sometimes cells with smaller lengths are selected in order to reduce the size. For this structure, under high temperature conditions, serious metal return phenomenon will occur, resulting in the failure of the programmed cells, so that the entire performance fail

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