Level shifter applied to segmented driving circuit of wide bandgap power device

Abstract

The invention discloses a level shifter applied to a segmented driving circuit of a wide bandgap power device. The level shifter comprises a level conversion module, a digital logic processing moduleand an RS latch module. A power rail conversion module converts signals of a low-voltage area into signals of a high-level voltage area through an LDMOS, and signals of the high-voltage area are processed through a low-voltage MOSFET; the digital logic processing module is used for detecting the change of the signals at the output end of the power rail conversion module and quickly transmitting the signals to the RS latch module; the RS latch module is used for stabilizing the output signal at a set level value so as to prevent misoperation caused by interference; and in some embodiments, an auxiliary pull-up module for reducing the dynamic power consumption of the level shifter is arranged between the level conversion module and the digital logic processing module. According to the invention, the false triggering problem of the level shifter is solved through logic design, the circuit response speed is improved, and meanwhile, the level shifter has the characteristics of zero static power consumption and low dynamic power consumption.

Description

technical field [0001] The invention belongs to the technical field of gate driving of high-voltage power devices, and in particular relates to a level shifter applied to segmental driving circuits of wide-bandgap power devices. Background technique [0002] Compared with traditional Si-based power devices, wide-bandgap semiconductor power devices have lower parasitic effects and better heat resistance, and are more suitable for high frequency and miniaturization requirements. Therefore, wide bandgap semiconductor power devices represented by GaN and SiC will have very large application scenarios. [0003] Wide bandgap semiconductor power devices are mainly used in high voltage and high switching frequency. The increase in speed of wide bandgap semiconductor power devices will inevitably increase the dv / dt and di / dt of related nodes, which will not only increase the noise of the electronic system, but also Severe cases will damage related components. These effects are espe...

AI Technical Summary

Problems solved by technology

At present, the high-speed level shifter often uses a short pulse sampling level shifter circuit. When the input signal is aperiodic signal and feedback signal, the output of the uninitialized level shifter may have an error signal, resulting in the failure of the drive circuit. confusion

Especially for the fully integrated segment drive circuit, the output logic error of the level shifter will cause the subsequent logic to be in a chaotic state

Therefore, while the level shifter achieves high speed, it also needs a corresponding startup and reset circuit to prevent false triggering of the logic, adding redundant pins

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