Epitaxial growth method for improving current expansion capability of nitride LED

Abstract

The invention provides an epitaxial growth method for improving the current expansion capability of a nitride LED, and the method comprises a process of growing a graphene layer, and specifically comprises the steps: 1, processing a substrate; 2, growing a low-temperature nitride buffer layer on the substrate and forming an irregular island on the low-temperature nitride buffer layer, wherein thelow-temperature nitride buffer layer comprises at least one of gallium nitride, aluminum nitride or aluminum gallium nitride; 3, growing a non-doped gallium nitride layer; 4, growing a silicon-doped N-type gallium nitride layer containing a graphene layer; 5, growing a light-emitting layer; 6, growing an aluminum and magnesium doped P-type aluminum gallium nitride layer containing a graphene layer; 7, growing a P-type gallium nitride layer doped with magnesium; 8, carrying out heat preservation for 20-30 minutes at the temperature of 650-680 DEG C, closing the heating system and the gas supplysystem, and carrying out furnace cooling. The epitaxial growth method provided by the invention can effectively improve the current expansion condition of the light-emitting diode.

Description

technical field [0001] The invention relates to the technical field of LEDs, in particular to an epitaxial growth method for improving the current spreading capability of a nitride LED. Background technique [0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor electronic device that converts electrical energy into light energy. When traditional LEDs are working, the p-layer and n-layer current distribution is uneven, especially at high current densities (35A / cm 2 In the case of the above) injection, the current edge effect is obvious, and the place where the current is concentrated is more likely to have a decrease in luminous efficiency, and it is also more likely to cause problems such as breakdown and short circuit, thereby reducing the luminous efficiency, antistatic ability and service life of the LED device. At present, many solutions have been proposed for the current expansion problem of nitride LEDs, such as adding AlGaN or InGaN insertion ...

AI Technical Summary

Problems solved by technology

When traditional LEDs are working, the p-layer and n-layer current distribution is uneven, especially at high current densities (35A / cm 2 In the case of above) injection, the current edge effect is obvious, and the place where the current is concentrated is more likely to have a decrease in luminous efficiency, and it is also more likely to cause problems such as breakdown and short circuit, thereby reducing the luminous efficiency, antistatic ability and service life of the LED device.

At present, many solutions have been proposed for the current extension problem of nitride LEDs, such as adding AlGaN or InGaN insertion layers in the LED structure, etc. However, the current extension effect is not ideal, and the current extension performance of nitride LEDs needs to be further improved

[0003] To sum up, there is an urgent need for an epitaxial growth method to improve the current expansion capability of nitride LEDs, so as to solve the problems of low luminous efficiency and easy breakdown and short circuit of existing LEDs.

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