MEMS sensor and preparation method thereof
A sensor and device layer technology, which is applied in the field of MEMS sensors and its preparation, can solve the problems of large zero output and achieve the effects of reducing high zero output, improving performance, back-end circuit and processing simplicity
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[0029] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0030] see figure 2 , the embodiment of the present invention provides a kind of preparation method of MEMS sensor 100, comprises the following steps:
[0031] In step S10 , the piezoelectric resistor 15 and the metal wire 50 of the device layer 10 are prepared, and the proof mass 16 and the cantilever beam 17 are pre-released.
[0032] Specifically, please refer to image 3 , the steps of preparing the piezoelectric resistor 15 and the metal wire 50 of the...
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