Light-emitting diode epitaxial wafer and manufacturing method thereof
A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve problems such as affecting radiation recombination efficiency, reducing luminous efficiency, and reducing light efficiency.
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[0033] In order to make the purpose, technical solution and advantages of the present disclosure clearer, the implementation manners of the present disclosure will be further described in detail below in conjunction with the accompanying drawings.
[0034] figure 1 is a schematic structural view of a light-emitting diode epitaxial wafer provided by an embodiment of the present disclosure, as shown in figure 1 As shown, the LED epitaxial wafer includes a substrate 1 , and a low-temperature buffer layer 2 , a high-temperature buffer layer 3 , an N-type layer 4 , a multi-quantum well layer 5 and a P-type layer 7 sequentially stacked on the substrate 1 .
[0035] The multi-quantum well layer 5 includes a plurality of quantum well layers 51 and quantum barrier layers 52 that are alternately grown periodically. Each quantum well layer 51 includes a first sublayer 511 and a second sublayer 512 grown on the first sublayer 511 , the first sublayer 511 is an InGaN layer, and the second...
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