Light emitting diode epitaxial wafer and manufacturing method thereof

Abstract

The invention provides a light emitting diode epitaxial wafer and a manufacturing method thereof, and belongs to the technical field of semiconductors. The light emitting diode epitaxial wafer comprises a substrate, and a low-temperature buffer layer, a high-temperature buffer layer, an N-type layer, a multi-quantum well layer and a P-type layer which are stacked on the substrate in sequence. Themulti-quantum well layer comprises a plurality of quantum well layers and quantum barrier layers which grow periodically and alternately, each quantum well layer comprises a first sub-layer and a second sub-layer growing on the first sub-layer, the first sub-layer is an InGaN layer, and the second sub-layer is a Si-doped InN layer. By doping Si into the second sub-layer, the enrichment of In in the quantum well layer is facilitated, so that the spontaneous radiation intensity in the quantum well layer is increased, and the effective energy band width is increased, and accordingly the drop effect can be reduced, and the light-emitting efficiency of the diode is improved.

Description

Technical field [0001] The present disclosure relates to the field of semiconductor technology, in particular to a light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] LED (Light Emitting Diode, light-emitting diode) is a semiconductor electronic component that can emit light. As a new type of high-efficiency, environmentally friendly and green solid-state lighting source, it is being rapidly and widely used, such as traffic signal lights, automotive interior and exterior lights, urban landscape lighting, and mobile phone backlights. [0003] The epitaxial wafer is the main component of the LED. The existing GaN-based LED epitaxial wafer includes a substrate and a low-temperature and low-temperature buffer layer, a high-temperature buffer layer, an N-type layer, a multiple quantum well layer, and an AlGaN electron barrier layered sequentially on the substrate. Layer and P-type layer. The multiple quantum well layer is a multilayer...

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Problems solved by technology

When the test current is gradually increased, its polarization effect will be enhanced, resulting in a decrease in the overlapping area of ​​the wave function of electrons and holes, thereby affecting the radiation recombination efficiency, and finally leading to a decrease in luminous efficiency, that is, the droop effect (droop effect refers to the chip The phenomenon that the light efficiency of the LED will decrease when a large current is input)

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