A barium titanate single crystal epitaxial thin film threshold switch device and its preparation method

A technology of threshold switch and epitaxial thin film, which is applied in the field of physical chemical synthesis and electronic information, to achieve good threshold switch characteristics, high preparation success rate, and simple steps

Active Publication Date: 2021-03-19
HENAN UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Existing strontium niobate titanate doped Nb:SrTiO 3 Most of the memristors with (NSTO) as the substrate are conventional metal (Pt, Au) / BTO / NSTO / structures, with stable bipolar or unipolar resistance switching phenomenon

Method used

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  • A barium titanate single crystal epitaxial thin film threshold switch device and its preparation method
  • A barium titanate single crystal epitaxial thin film threshold switch device and its preparation method
  • A barium titanate single crystal epitaxial thin film threshold switch device and its preparation method

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Embodiment 1

[0025] A method for preparing a barium titanate single crystal epitaxial thin film threshold switching device, the device structure of the strontium niobate titanate doped device is Au / Cr / BTO / NSTO / In, comprising the following steps:

[0026] (1) The strontium niobium titanate single crystal (NSTO) substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water for 5 minutes respectively. The strontium niobium titanate single crystal substrate was selected from (100) Surface, a commercial substrate with a niobium doping amount of 0.7wt%;

[0027] (2) Put the cleaned NSTO substrate with a size of 5 mm×3 mm into the pulsed laser deposition system (Pulsed Laser Deposition), using BaTiO with a purity of 99.99% purchased by Beijing Zhongjinyan New Material Technology Co., Ltd. 3 For the ceramic target, adjust the distance between the target and the substrate to be 5 cm, seal the pulsed laser substrate system and pump it to a background vacuum of 2.0×10 -4 Pa...

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Abstract

The application discloses a barium titanate single crystal epitaxial thin film threshold switch device and its preparation method, which belongs to the field of physical chemical synthesis and electronic information technology. The preparation method includes the following steps: (1) using NSTO as the substrate, cleaning the The NSTO substrate is placed in a pulsed laser deposition system, and barium titanate ceramics are used as a target to grow a barium titanate film. After the growth is completed, in-situ annealing is performed, and the temperature is lowered to room temperature under the protection of an oxygen atmosphere, and the sample is taken out; (2) Titanium Cover the surface of the barium oxide film with a mask plate, and vapor-deposit a chromium film; (3) thermally vapor-deposit a metal Au film on the chromium film; The epitaxial barium titanate thin film threshold switch device has a structure of Au / Cr / BTO / NSTO / In.

Description

technical field [0001] The invention relates to the technical fields of physical chemical synthesis and electronic information, in particular to a barium titanate single crystal epitaxial thin film threshold switch device and a preparation method thereof. Background technique [0002] Many oxide materials have bistable resistance states, switching speeds up to nanoseconds, and power consumption as low as microwatts, so they can be used in non-volatile resistive RAM (RRAM). However, RRAM devices suffer from potential current channels caused by leakage currents, limiting their development. Using a threshold resistive switch in series with RRAM can reduce the leakage current, thereby solving the potential current channel problem. Therefore, threshold resistive switching devices are critical for realizing RRAM memory applications. In addition, the threshold resistance switching effect can also be used in synaptic devices for neural network computing. [0003] Barium titanate ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/12H01L43/10H01L43/08
CPCH10N50/10H10N50/01H10N50/85
Inventor 贾彩虹杨光红李沁轩张伟风
Owner HENAN UNIVERSITY
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