Barium titanate single crystal epitaxial film threshold switching device and preparation method thereof

A threshold switching and epitaxial thin film technology is applied in the fields of physical chemical synthesis and electronic information to achieve stable Vth and Vhold distribution, stable threshold characteristics, and high preparation success rate.

Active Publication Date: 2020-04-07
HENAN UNIVERSITY
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing strontium niobate titanate doped Nb:SrTiO 3 Most of the memristors with (NSTO) as the substrate are conventional metal (Pt, Au) / BTO / NSTO / structures, with stable bipolar or unipolar resistance switching phenomenon

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Barium titanate single crystal epitaxial film threshold switching device and preparation method thereof
  • Barium titanate single crystal epitaxial film threshold switching device and preparation method thereof
  • Barium titanate single crystal epitaxial film threshold switching device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] A method for preparing a barium titanate single crystal epitaxial thin film threshold switching device, the device structure of the strontium niobate titanate doped device is Au / Cr / BTO / NSTO / In, comprising the following steps:

[0026] (1) The strontium niobium titanate single crystal (NSTO) substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water for 5 minutes respectively. The strontium niobium titanate single crystal substrate was selected from (100) Surface, a commercial substrate with a niobium doping amount of 0.7wt%;

[0027] (2) Put the cleaned NSTO substrate with a size of 5 mm×3 mm into the pulsed laser deposition system (Pulsed Laser Deposition), using BaTiO with a purity of 99.99% purchased by Beijing Zhongjinyan New Material Technology Co., Ltd. 3 For the ceramic target, adjust the distance between the target and the substrate to be 5 cm, seal the pulsed laser substrate system and pump it to a background vacuum of 2.0×10 -4 Pa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a barium titanate single crystal epitaxial film threshold switching device and a preparation method thereof. The invention belongs to the technical field of physical chemistrysynthesis and electronic information. The preparation method comprises the following steps: (1) taking NSTO as a substrate, putting the cleaned NSTO substrate into a pulse laser deposition system, taking barium titanate ceramic as a target material, carrying out barium titanate film growth, carrying out in-situ annealing after the growth is finished, cooling to room temperature under the protection of an oxygen atmosphere, and taking out a sample; (2) covering the surface of the barium titanate film with a mask, and evaporating a chromium film; (3) thermally evaporating a metal Au film on thechromium film; and (4) pressing a metal indium wire or indium particles on the back surface of the substrate to serve as a lower electrode to obtain the single crystal epitaxial barium titanate thin film threshold switching device, wherein the structure of the device is Au/Cr/BTO/NSTO/In.

Description

technical field [0001] The invention relates to the technical fields of physical chemical synthesis and electronic information, in particular to a barium titanate single crystal epitaxial thin film threshold switch device and a preparation method thereof. Background technique [0002] Many oxide materials have bistable resistance states, switching speeds up to nanoseconds, and power consumption as low as microwatts, so they can be used in non-volatile resistive RAM (RRAM). However, RRAM devices suffer from potential current channels caused by leakage currents, limiting their development. Using a threshold resistive switch in series with RRAM can reduce the leakage current, thereby solving the potential current channel problem. Therefore, threshold resistive switching devices are critical for realizing RRAM memory applications. In addition, the threshold resistance switching effect can also be used in synaptic devices for neural network computing. [0003] Barium titanate ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/12H01L43/10H01L43/08
CPCH10N50/10H10N50/01H10N50/85
Inventor 贾彩虹杨光红李沁轩张伟风
Owner HENAN UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap