Flow uniformizing piece, process chamber, atomic layer deposition equipment and deposition method

Abstract

The invention discloses a flow uniformizing piece, a process chamber, atomic layer deposition equipment and a deposition method. The flow uniformizing piece comprises a plurality of first flow uniformizing holes and second flow uniformizing holes which are formed at intervals, and air outlets of the first flow uniformizing holes and air outlets of the second flow uniformizing holes are located indifferent planes. Compared with the structure of a traditional flow uniformizing piece, the flow uniformizing piece of the invention has the advantage that unexpected reaction caused by mixing a firstprecursor and a second precursor on the surface of a planar flow uniformizing piece can be effectively reduced. Even if a small amount of the first precursor is adsorbed on the surface of the flow uniformizing piece, the possibility of unexpected reaction is reduced due to the fact that the first precursor and the second precursor are not on the same plane such that the thickness uniformity of afilm and the process repeatability can be effectively improved, the particle level in a cavity body can be effectively improved, and the quality and the performance of the film are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a flow equalizer, a process chamber, an atomic layer deposition device and an atomic layer deposition method. Background technique [0002] With the development of the integrated circuit industry, the device critical dimension (Device Critical Dimension) of the component is gradually reduced, and the aspect ratio (Aspect Ratio) is gradually increased. Films with good formability pose serious challenges. Atomic Layer Deposition (ALD) is a new thin film deposition method proposed to meet this challenge. [0003] Atomic layer deposition is achieved by independently feeding the reaction precursor into the reactor, and the reaction is realized through the catalysis of the substrate surface. The first precursor enters the reactor in a pulsed manner and adsorbs on the surface of the substrate, and then the excess precursor is purged from the reactor to complete the...

AI Technical Summary

Problems solved by technology

The traces of the first precursor and the second precursor remaining on the chamber wall, around the heater and other spaces in the chamber will react to form unexpected impurities, which will contaminate the chamber and the surface of the substrate. Introduces impurities in the film, bringing particle contamination to the reaction and affecting the thickness uniformity, composition and performance of subsequent films

such as in TiCl 4 and NH 3 In the ALD reaction to generate TiN, the TiN and TiCl formed on the non-substrate surface 4 .nNH 3 etc., not only increase the particle contamination of the film, but also reduce the film properties such as resistivity

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