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Anti-backflow circuit, bidirectional level converter and integrated circuit

An anti-backflow and circuit technology, which is applied in the direction of improving the reliability of logic circuits, electrical components, and bipolar transistors, and can solve the problems of pull-up drive tube current backflow, tube burnout, etc.

Pending Publication Date: 2020-03-06
SHENZHEN STATE MICROELECTRONICS CO LTD
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  • Abstract
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Problems solved by technology

[0004] In view of this, the embodiment of the present invention provides a transistor anti-backflow circuit, a bidirectional level shifter and an integrated circuit, aiming at solving the phenomenon of current backflow that may occur in the pull-up drive transistor in the traditional level shifter, so that the Tube burning problem

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  • Anti-backflow circuit, bidirectional level converter and integrated circuit
  • Anti-backflow circuit, bidirectional level converter and integrated circuit
  • Anti-backflow circuit, bidirectional level converter and integrated circuit

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Embodiment Construction

[0018] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0019] see figure 1 , the block diagram of the bidirectional level shifter provided by the embodiment of the present invention, for the convenience of description, only shows the part related to this embodiment, and the details are as follows:

[0020] The bidirectional level shifter includes a first signal terminal 11, a second signal terminal 12, a first power supply VCCA, a second power supply VCCB, a first pull-up drive tube connected to the first signal terminal 11, and a first pull-up drive tube connected to the first signal terminal 11. The first pull-down drive tube, the second pull-up dri...

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Abstract

An anti-backflow circuit of a transistor is connected with a signal terminal and comprises: a driving transistor, awherein gate of the driving transistor is connected with a driving signal, a high-potential end of the driving transistor is connected with a power supply, and a low-potential end of the driving transistor is connected with the signal terminal; and an anti-backflow module which is electrically connected with the pull-up power supply, the signal terminal and the substrate of the driving transistor, and is configured to enable the power supply voltage to be loaded on the substrateof the driving transistor when the power supply is powered on, and enable the voltage of the signal terminal to be loaded on the substrate of the driving transistor when the pull-up power supply is powered off. According to the invention, the substrate voltage of the transistor tube can be adjusted to change along with the level of the signal terminal, so that the low-potential voltage of the transistor is not higher than the substrate voltage, and the transistor tube is effectively prevented from being burnt out due to backward flowing of current.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and in particular relates to an anti-backflow circuit, a bidirectional level converter and an integrated circuit. Background technique [0002] At present, data transmission technology is widely used in people's daily life. However, when designing electronic circuits, more and more complex designs are presented. In the circuit design with complex internal transmission structure, the most basic thing is to solve the conversion problem between two different levels, and the most widely used is the bidirectional level converter. [0003] However, traditional level shifters have certain risks in practical applications. The traditional bidirectional level shifter structure has two ports for input and output, and two power supply voltages are loaded on the two ports respectively, and the substrates of the pull-up drive transistors on the two ports are connected to the power supply voltage. ...

Claims

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Application Information

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IPC IPC(8): H03K19/003H03K19/018
CPCH03K19/00307H03K19/001H03K19/01843
Inventor 韩文涛宋阳刘建新赵鹏
Owner SHENZHEN STATE MICROELECTRONICS CO LTD
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